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IRFU3704ZPBF
Infineon Technologies AG
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IRFU3704ZPBF
International Rectifier
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IRFU3704Z
International Rectifier
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IRFU3704PBF
International Rectifier
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IRFU3704
International Rectifier
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Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | ||||||||||||||||||||||||||||||||||||||
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Composite Price
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Pbfree Code
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Rohs Code
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Part Life Cycle Code
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Polarity/Channel Type |
Surface Mount
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Configuration |
Number of Terminals
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DS Breakdown Voltage-Min
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Number of Elements |
Drain Current-Max (ID)
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Drain-source On Resistance-Max
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Additional Feature
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Avalanche Energy Rating (Eas)
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Feedback Cap-Max (Crss)
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FET Technology |
Operating Mode
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Power Dissipation-Max (Abs)
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Pulsed Drain Current-Max (IDM)
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Transistor Application
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Transistor Element Material
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JEDEC-95 Code
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JESD-30 Code
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JESD-609 Code
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Qualification Status
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Moisture Sensitivity Level
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Operating Temperature-Max
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Operating Temperature-Min
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Peak Reflow Temperature (Cel)
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Time@Peak Reflow Temperature-Max (s)
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Case Connection
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Package Body Material
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Package Shape
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Package Style
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Terminal Finish
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Terminal Form
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Terminal Position
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Ihs Manufacturer
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Package Description
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Reach Compliance Code
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ECCN Code
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Samacsys Manufacturer
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Part Package Code
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Pin Count
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Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 60 A | 8.4 mΩ | 41 mJ | 170 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 48 W | 240 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | e3 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | MATTE TIN OVER NICKEL | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | IPAK-3 | not_compliant | EAR99 | Infineon | ||||||
Yes | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 30 A | 8.4 mΩ | 41 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 48 W | 240 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | Matte Tin (Sn) - with Nickel (Ni) barrier | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | LEAD FREE, PLASTIC, IPAK-3 | not_compliant | EAR99 | TO-251AA | 3 | |||||
No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 30 A | 8.4 mΩ | 41 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 48 W | 240 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | e0 | Not Qualified | 1 | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | IN-LINE, R-PSIP-T3 | compliant | EAR99 | TO-251AA | 3 | ||||||||
Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 30 A | 9.5 mΩ | ULTRA-LOW RESISTANCE | 216 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 90 W | 300 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | e3 | Not Qualified | 1 | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | MATTE TIN OVER NICKEL | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | LEAD FREE, PLASTIC, IPAK-3 | compliant | EAR99 | TO-251AA | 3 | |||||||
No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 30 A | 9.5 mΩ | ULTRA-LOW RESISTANCE | 216 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 90 W | 300 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | e0 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | IPAK-3 | compliant | EAR99 | TO-251AA | 3 |
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IRFU3704ZPBF
Infineon Technologies AG
|
Check for Price | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 60 A | 8.4 mΩ | 41 mJ | 170 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 48 W | 240 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | e3 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | MATTE TIN OVER NICKEL | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | IPAK-3 | not_compliant | EAR99 | Infineon | |||||||
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IRFU3704ZPBF
International Rectifier
|
Check for Price | Yes | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 30 A | 8.4 mΩ | 41 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 48 W | 240 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | Matte Tin (Sn) - with Nickel (Ni) barrier | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | LEAD FREE, PLASTIC, IPAK-3 | not_compliant | EAR99 | TO-251AA | 3 | ||||||
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IRFU3704Z
International Rectifier
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 30 A | 8.4 mΩ | 41 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 48 W | 240 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | e0 | Not Qualified | 1 | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | IN-LINE, R-PSIP-T3 | compliant | EAR99 | TO-251AA | 3 | |||||||||
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IRFU3704PBF
International Rectifier
|
Check for Price | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 30 A | 9.5 mΩ | ULTRA-LOW RESISTANCE | 216 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 90 W | 300 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | e3 | Not Qualified | 1 | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | MATTE TIN OVER NICKEL | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | LEAD FREE, PLASTIC, IPAK-3 | compliant | EAR99 | TO-251AA | 3 | ||||||||
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IRFU3704
International Rectifier
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 30 A | 9.5 mΩ | ULTRA-LOW RESISTANCE | 216 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 90 W | 300 A | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | e0 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | IPAK-3 | compliant | EAR99 | TO-251AA | 3 |