Parametric results for: FDV301N under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 6

9 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 8

9 hits Apply

DS Breakdown Voltage-Min (1)

25 V 8

9 hits Apply

Drain Current-Max (ID) (2)

220 mA 8 500 mA 1

Min (A) - Max (A)

9 hits Apply

Drain-source On Resistance-Max (2)

4 Ω 5 5 Ω 3

Min (Ω) - Max (Ω)

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 9

9 hits Apply

R-PDSO-G3 8

9 hits Apply

e3 6

9 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 7 onsemi 2

9 hits Apply

1 6

9 hits Apply

Number of Elements (1)

1 9

9 hits Apply

Number of Terminals (1)

3 8

9 hits Apply

ENHANCEMENT MODE 9

9 hits Apply

150.0 °C 8

9 hits Apply

-55.0 °C 4

9 hits Apply

PLASTIC/EPOXY 8

9 hits Apply

RECTANGULAR 8

9 hits Apply

SMALL OUTLINE 8

9 hits Apply

Active 1 End Of Life 1 Obsolete 6 Transferred 1

9 hits Apply

Yes 3

9 hits Apply

260 6

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 9

9 hits Apply

350 mW 5

9 hits Apply

Surface Mount (1)

YES 9

9 hits Apply