Parametric results for: FDN342P under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

6 hits Apply

DS Breakdown Voltage-Min (1)

20 V 5

6 hits Apply

Drain Current-Max (ID) (1)

2 A 5

6 hits Apply

Drain-source On Resistance-Max (1)

80 mΩ 5

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

6 hits Apply

R-PDSO-G3 5

6 hits Apply

e3 4

6 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 4 onsemi 1 Rochester Electronics LLC 1

6 hits Apply

1 4

6 hits Apply

Number of Elements (1)

1 5

6 hits Apply

Number of Terminals (1)

3 5

6 hits Apply

ENHANCEMENT MODE 5

6 hits Apply

150.0 °C 4

6 hits Apply

PLASTIC/EPOXY 5

6 hits Apply

RECTANGULAR 5

6 hits Apply

SMALL OUTLINE 5

6 hits Apply

Active 2 Obsolete 3 Transferred 1

6 hits Apply

Yes 3

6 hits Apply

260 3

6 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 5

6 hits Apply

460 mW 3

6 hits Apply

Surface Mount (1)

YES 5

6 hits Apply