Parametric results for: BSP-2 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) Gate-Emitter Thr Voltage-Max JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

AVALANCHE RATED 16 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 3 FAST SWITCHING 4 HIGH SWITCH SPEED 1 HIGH VOLTAGE 3 LOGIC LEVEL COMPATIBLE 44

209 hits Apply

15.0 mJ 3 130.0 mJ 16

Min (mJ) - Max (mJ)

209 hits Apply

COLLECTOR 25 DRAIN 134

209 hits Apply

Collector Current-Max (IC) (5)

50 mA 1 100 mA 3 500 mA 6 1 A 20 2.5 A 2

Min (A) - Max (A)

209 hits Apply

2.5 pF 8 6 pF 3

Min (pF) - Max (pF)

209 hits Apply

Collector-Emitter Voltage-Max (2)

250 V 26 1 kV 2

Min (V) - Max (V)

209 hits Apply

Configuration (3)

SINGLE 67 Single 1 SINGLE WITH BUILT-IN DIODE 139

209 hits Apply

DC Current Gain-Min (hFE) (2)

30.0 6 40.0 24

Min - Max

209 hits Apply

DS Breakdown Voltage-Min (11)

30 V 16 50 V 10 60 V 21 100 V 15 200 V 21 240 V 5 250 V 18 300 V 14 400 V 10 500 V 10 600 V 1

Min (V) - Max (V)

209 hits Apply

Drain Current-Max (Abs) (ID) (2)

500 mA 1 1.8 A 1

Min (A) - Max (A)

209 hits Apply

Drain Current-Max (ID) (21)

200 mA 11 210 mA 12 225 mA 30 250 mA 17 275 mA 8 300 mA 5 325 mA 4 350 mA 8 380 mA 1 400 mA 10 450 mA 3 500 mA 7 600 mA 1 650 mA 2 660 mA 6 1 A 7 1.1 A 5 1.2 A 3 1.7 A 1 1.8 A 10 3 A 18

Min (A) - Max (A)

209 hits Apply

Drain-source On Resistance-Max (20)

250 mΩ 2 300 mΩ 3 400 mΩ 14 500 mΩ 8 600 mΩ 3 700 mΩ 5 800 mΩ 4 1.4 Ω 3 1.8 Ω 6 2 Ω 2 3 Ω 10 3.3 Ω 1 4 Ω 10 5 Ω 1 6 Ω 11 10 Ω 11 12 Ω 12 15 Ω 24 17 Ω 14 20 Ω 5

Min (Ω) - Max (Ω)

209 hits Apply

METAL-OXIDE SEMICONDUCTOR 170

209 hits Apply

10 pF 5 12 pF 5 15 pF 38 30 pF 1 60 pF 1

Min (pF) - Max (pF)

209 hits Apply

Gate-Emitter Thr Voltage-Max (1)

6.5 V 1

209 hits Apply

TO-261AA 6 TO-92 8

209 hits Apply

O-PBCY-T3 8 R-PDSO-G4 169

209 hits Apply

e0 26 e3 72

209 hits Apply

Manufacturer (13)

Diodes Incorporated 3 Freescale Semiconductor 1 Infineon Technologies AG 41 Motorola Mobility LLC 3 Motorola Semiconductor Products 3 Nexperia 17 North American Philips Discrete Products Div 9 NXP Semiconductors 76 Philips Semiconductors 20 Rochester Electronics LLC 2 Siemens 16 YAGEO Corporation 15 Zetex / Diodes Inc 3

209 hits Apply

1 52 3 7

209 hits Apply

Number of Elements (1)

1 206

209 hits Apply

Number of Terminals (2)

3 8 4 169

209 hits Apply

ENHANCEMENT MODE 167

209 hits Apply

140.0 °C 3 150.0 °C 127

Min (°C) - Max (°C)

209 hits Apply

-65.0 °C 2 -55.0 °C 3

Min (°C) - Max (°C)

209 hits Apply

PLASTIC/EPOXY 177

209 hits Apply

RECTANGULAR 169 ROUND 8

209 hits Apply

CYLINDRICAL 8 SMALL OUTLINE 169

209 hits Apply

Active 18 End Of Life 1 Not Recommended 5 Obsolete 114 Transferred 71

209 hits Apply

No 2 Yes 29

209 hits Apply

235 1 255 3 260 38 NOT SPECIFIED 14

209 hits Apply

Polarity/Channel Type (3)

N-CHANNEL 58 NPN 30 P-CHANNEL 114

209 hits Apply

4 W 2 5 W 8

Min (W) - Max (W)

209 hits Apply

1 W 13 1.2 W 4 1.5 W 34 1.65 W 6 1.79 W 3 1.8 W 20 4 W 2

Min (W) - Max (W)

209 hits Apply

Surface Mount (2)

NO 17 YES 191

209 hits Apply

Transition Frequency-Nom (fT) (3)

40 MHz 6 50 MHz 5 70 MHz 19

Min (MHz) - Max (MHz)

209 hits Apply