Parametric results for: BLP15M9S70Z under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Gain-Min (Gp) Surface Mount

SOURCE 1

1 hit Apply

Configuration (1)

SINGLE 1

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DS Breakdown Voltage-Min (1)

65 V 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

0.45 pF 1

1 hit Apply

Highest Frequency Band (1)

L BAND 1

1 hit Apply

R-CDFP-F2 1

1 hit Apply

Manufacturer (1)

Ampleon 1

1 hit Apply

3 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

2 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

225.0 °C 1

1 hit Apply

CERAMIC, METAL-SEALED COFIRED 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

FLATPACK 1

1 hit Apply

Contact Manufacturer 1

1 hit Apply

245 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

Power Gain-Min (Gp) (1)

16.5 dB 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply