Filter Your Search
1 - 10 of 26 results
Select Parts | Part Number |
---|
|
BSZ060NE2LSATMA1
Infineon Technologies AG
|
||
|
STV60NE06-16
STMicroelectronics
|
||
|
STP60NE03L-12
STMicroelectronics
|
||
|
STB60NE03L-10
STMicroelectronics
|
||
|
STB60NE03L-12
STMicroelectronics
|
||
|
BSZ060NE2LS
Infineon Technologies AG
|
||
|
3VD050060NEJL
Hangzhou Silan Microelectronics CO LTD
|
||
|
3VD060060NEJL
Hangzhou Silan Microelectronics CO LTD
|
||
|
3VD040060NEJL
Hangzhou Silan Microelectronics CO LTD
|
||
|
STB60NE06-16T4
STMicroelectronics
|
Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | ||||||||||||||||||||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Composite Price
|
Pbfree Code
|
Rohs Code
|
Part Life Cycle Code
|
Polarity/Channel Type |
Surface Mount
|
Configuration |
Number of Terminals
|
DS Breakdown Voltage-Min
|
Number of Elements |
Drain Current-Max (ID)
|
Drain-source On Resistance-Max
|
Avalanche Energy Rating (Eas)
|
FET Technology |
Operating Mode
|
Power Dissipation-Max (Abs)
|
Pulsed Drain Current-Max (IDM)
|
Transistor Application
|
Transistor Element Material
|
JEDEC-95 Code
|
JESD-30 Code
|
JESD-609 Code
|
Qualification Status
|
Moisture Sensitivity Level
|
Operating Temperature-Max
|
Peak Reflow Temperature (Cel)
|
Time@Peak Reflow Temperature-Max (s)
|
Case Connection
|
Package Body Material
|
Package Shape
|
Package Style
|
Terminal Finish
|
Terminal Form
|
Terminal Position
|
Ihs Manufacturer
|
Package Description
|
Pin Count
|
Reach Compliance Code
|
ECCN Code
|
Samacsys Manufacturer
|
Part Package Code
|
No | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 25 V | 1 | 12 A | 8.1 mΩ | 16 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 160 A | SWITCHING | SILICON | S-PDSO-N8 | e3 | 1 | DRAIN | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | Tin (Sn) | NO LEAD | DUAL | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC, TSDSON-8 | 8 | not_compliant | EAR99 | Infineon | ||||||||
Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 10 | 60 V | 1 | 60 A | 16 mΩ | 350 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 240 A | SWITCHING | SILICON | R-PDSO-G10 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | STMICROELECTRONICS | SMALL OUTLINE, R-PDSO-G10 | 10 | compliant | EAR99 | SOT | ||||||||||
No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 30 V | 1 | 60 A | 18 mΩ | 250 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 100 W | 240 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e0 | Not Qualified | 175 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | TIN LEAD | THROUGH-HOLE | SINGLE | STMICROELECTRONICS | TO-220, 3 PIN | 3 | not_compliant | EAR99 | TO-220AB | |||||||
No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 30 V | 1 | 60 A | 15 mΩ | 600 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 120 W | 240 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e0 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | STMICROELECTRONICS | D2PAK-3 | 3 | not_compliant | EAR99 | D2PAK | ||||||
No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 30 V | 1 | 60 A | 18 mΩ | 150 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 100 W | 240 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e0 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | STMICROELECTRONICS | D2PAK-3 | 3 | not_compliant | EAR99 | D2PAK | ||||||
Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 25 V | 1 | 12 A | 8.1 mΩ | 16 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 26 W | 160 A | SWITCHING | SILICON | S-PDSO-N8 | e3 | 1 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | Tin (Sn) | NO LEAD | DUAL | INFINEON TECHNOLOGIES AG | 8 | not_compliant | EAR99 | Infineon | |||||
Yes | Contact Manufacturer | N-CHANNEL | YES | SINGLE | 1 | 250 mA | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 °C | HANGZHOU SILAN MICROELECTRONICS CO LTD | compliant | EAR99 | ||||||||||||||||||||||||||||
Yes | Contact Manufacturer | N-CHANNEL | YES | SINGLE | 1 | 300 mA | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 °C | HANGZHOU SILAN MICROELECTRONICS CO LTD | compliant | EAR99 | ||||||||||||||||||||||||||||
Yes | Contact Manufacturer | N-CHANNEL | YES | SINGLE | 1 | 115 mA | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 °C | HANGZHOU SILAN MICROELECTRONICS CO LTD | compliant | EAR99 | ||||||||||||||||||||||||||||
Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 60 A | 16 mΩ | 400 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 240 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | STMICROELECTRONICS | D2PAK-3 | 3 | not_compliant | EAR99 | D2PAK |
|
BSZ060NE2LSATMA1
Infineon Technologies AG
|
$0.3212 | No | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 25 V | 1 | 12 A | 8.1 mΩ | 16 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 160 A | SWITCHING | SILICON | S-PDSO-N8 | e3 | 1 | DRAIN | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | Tin (Sn) | NO LEAD | DUAL | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC, TSDSON-8 | 8 | not_compliant | EAR99 | Infineon | |||||||||
|
STV60NE06-16
STMicroelectronics
|
Check for Price | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 10 | 60 V | 1 | 60 A | 16 mΩ | 350 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 240 A | SWITCHING | SILICON | R-PDSO-G10 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | STMICROELECTRONICS | SMALL OUTLINE, R-PDSO-G10 | 10 | compliant | EAR99 | SOT | |||||||||||
|
STP60NE03L-12
STMicroelectronics
|
Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 30 V | 1 | 60 A | 18 mΩ | 250 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 100 W | 240 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e0 | Not Qualified | 175 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | TIN LEAD | THROUGH-HOLE | SINGLE | STMICROELECTRONICS | TO-220, 3 PIN | 3 | not_compliant | EAR99 | TO-220AB | ||||||||
|
STB60NE03L-10
STMicroelectronics
|
Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 30 V | 1 | 60 A | 15 mΩ | 600 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 120 W | 240 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e0 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | STMICROELECTRONICS | D2PAK-3 | 3 | not_compliant | EAR99 | D2PAK | |||||||
|
STB60NE03L-12
STMicroelectronics
|
Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 30 V | 1 | 60 A | 18 mΩ | 150 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 100 W | 240 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e0 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | STMICROELECTRONICS | D2PAK-3 | 3 | not_compliant | EAR99 | D2PAK | |||||||
|
BSZ060NE2LS
Infineon Technologies AG
|
Check for Price | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 25 V | 1 | 12 A | 8.1 mΩ | 16 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 26 W | 160 A | SWITCHING | SILICON | S-PDSO-N8 | e3 | 1 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | Tin (Sn) | NO LEAD | DUAL | INFINEON TECHNOLOGIES AG | 8 | not_compliant | EAR99 | Infineon | ||||||
|
3VD050060NEJL
Hangzhou Silan Microelectronics CO LTD
|
Check for Price | Yes | Contact Manufacturer | N-CHANNEL | YES | SINGLE | 1 | 250 mA | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 °C | HANGZHOU SILAN MICROELECTRONICS CO LTD | compliant | EAR99 | |||||||||||||||||||||||||||||
|
3VD060060NEJL
Hangzhou Silan Microelectronics CO LTD
|
Check for Price | Yes | Contact Manufacturer | N-CHANNEL | YES | SINGLE | 1 | 300 mA | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 °C | HANGZHOU SILAN MICROELECTRONICS CO LTD | compliant | EAR99 | |||||||||||||||||||||||||||||
|
3VD040060NEJL
Hangzhou Silan Microelectronics CO LTD
|
Check for Price | Yes | Contact Manufacturer | N-CHANNEL | YES | SINGLE | 1 | 115 mA | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 °C | HANGZHOU SILAN MICROELECTRONICS CO LTD | compliant | EAR99 | |||||||||||||||||||||||||||||
|
STB60NE06-16T4
STMicroelectronics
|
Check for Price | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 60 A | 16 mΩ | 400 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 240 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | STMICROELECTRONICS | D2PAK-3 | 3 | not_compliant | EAR99 | D2PAK |