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1 - 9 of 9 results
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2SK1930TE24R
Toshiba America Electronic Components
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Check for Price | Obsolete | N-CHANNEL | YES | SINGLE | 2 | 1 kV | 1 | 4 A | 3.8 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 100 W | SWITCHING | SILICON | R-PSSO-G2 | Not Qualified | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | TOSHIBA CORP | SMALL OUTLINE, R-PSSO-G2 | unknown | EAR99 | 8541.29.00.95 | ||||||||||||||
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2SK1930(TO-220SM)
Toshiba America Electronic Components
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Check for Price | No | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 1 kV | 1 | 4 A | 3.8 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 12 A | SWITCHING | SILICON | R-PSSO-G2 | Not Qualified | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | TOSHIBA CORP | SMALL OUTLINE, R-PSSO-G2 | unknown | EAR99 | TO-220SM | 3 | |||||||||
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2SK1930
Toshiba America Electronic Components
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 1 kV | 1 | 4 A | 3.8 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 80 W | 12 A | SWITCHING | SILICON | R-PSIP-T3 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | Tin/Lead (Sn/Pb) | THROUGH-HOLE | SINGLE | TOSHIBA CORP | IN-LINE, R-PSIP-T3 | unknown | EAR99 | 3 | Toshiba | ||||||||
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2SK1930TE24L
Toshiba America Electronic Components
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Check for Price | Obsolete | N-CHANNEL | YES | SINGLE | 2 | 1 kV | 1 | 4 A | 3.8 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 100 W | SWITCHING | SILICON | R-PSSO-G2 | Not Qualified | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | TOSHIBA CORP | SMALL OUTLINE, R-PSSO-G2 | unknown | EAR99 | 8541.29.00.95 | ||||||||||||||
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2SK1930(TO-220FL)
Toshiba America Electronic Components
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Check for Price | No | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 1 kV | 1 | 4 A | 3.8 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 12 A | SWITCHING | SILICON | R-PSIP-T3 | Not Qualified | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | TOSHIBA CORP | IN-LINE, R-PSIP-T3 | unknown | EAR99 | TO-220FL | 3 | |||||||||
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2SK1930(SM)
Toshiba America Electronic Components
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Check for Price | Obsolete | N-CHANNEL | YES | SINGLE | 1 | 4 A | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 80 W | 150 °C | TOSHIBA CORP | , | unknown | EAR99 | |||||||||||||||||||||||||||
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2SK1930(2-10S2B)
Toshiba America Electronic Components
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Check for Price | No | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 1 kV | 1 | 4 A | 3.8 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 12 A | SWITCHING | SILICON | R-PSSO-G2 | Not Qualified | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | TOSHIBA CORP | SMALL OUTLINE, R-PSSO-G2 | unknown | EAR99 | 3 | ||||||||||
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2SK1930(2-10S1B)
Toshiba America Electronic Components
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Check for Price | No | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 1 kV | 1 | 4 A | 3.8 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 12 A | SWITCHING | SILICON | R-PSIP-T3 | Not Qualified | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | TOSHIBA CORP | IN-LINE, R-PSIP-T3 | unknown | EAR99 | 3 | ||||||||||
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2SK1930-R
Fuji Electric Co Ltd
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE | 3 | 60 V | 1 | 50 A | 40 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 A | SWITCHING | SILICON | R-PSFM-T3 | Not Qualified | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | FUJI ELECTRIC CO LTD | FLANGE MOUNT, R-PSFM-T3 | unknown | EAR99 | TO-3PF | 3 |