Parametric results for: 2n7000l under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

LOW THRESHOLD 5

10 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 10

10 hits Apply

DS Breakdown Voltage-Min (1)

60 V 10

10 hits Apply

Drain Current-Max (ID) (2)

115 mA 3 200 mA 7

Min (A) - Max (A)

10 hits Apply

Drain-source On Resistance-Max (2)

5 Ω 7 7.5 Ω 3

Min (Ω) - Max (Ω)

10 hits Apply

METAL-OXIDE SEMICONDUCTOR 10

10 hits Apply

5 pF 10

10 hits Apply

TO-226AA 6 TO-92 3

10 hits Apply

O-PBCY-T3 2 O-PBCY-W3 8

10 hits Apply

e0 2

10 hits Apply

Manufacturer (4)

Fairchild Semiconductor Corporation 1 Temic Semiconductors 4 Unisonic Technologies Co Ltd 3 Vishay Siliconix 2

10 hits Apply

Number of Elements (1)

1 10

10 hits Apply

Number of Terminals (1)

3 10

10 hits Apply

ENHANCEMENT MODE 10

10 hits Apply

150.0 °C 1

10 hits Apply

PLASTIC/EPOXY 10

10 hits Apply

ROUND 10

10 hits Apply

CYLINDRICAL 10

10 hits Apply

Active 3 Obsolete 3 Transferred 4

10 hits Apply

NOT SPECIFIED 3

10 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 10

10 hits Apply

Surface Mount (1)

NO 10

10 hits Apply