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2N7002PS,115
Nexperia
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$0.1309 | Not Recommended | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 6 | 60 V | 2 | 320 mA | 1.6 Ω | LOGIC LEVEL COMPATIBLE | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDSO-G6 | e3 | AEC-Q101; IEC-60134 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | NEXPERIA | TSSOP | SMALL OUTLINE, R-PDSO-G6 | 6 | SOT363 | compliant | EAR99 | Nexperia | ||||||
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2N7002PS,125
Nexperia
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$0.1739 | Not Recommended | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 6 | 60 V | 2 | 320 mA | 1.6 Ω | LOGIC LEVEL COMPATIBLE | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDSO-G6 | e3 | AEC-Q101; IEC-60134 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | NEXPERIA | TSSOP | SMALL OUTLINE, R-PDSO-G6 | 6 | SOT363 | compliant | EAR99 | Nexperia | ||||||
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2N7002PS
NXP Semiconductors
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Check for Price | Yes | Transferred | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 6 | 60 V | 2 | 320 mA | 1.6 Ω | LOGIC LEVEL COMPATIBLE | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDSO-G6 | e3 | Not Qualified | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | NXP SEMICONDUCTORS | SC-88 | PLASTIC, SC-88, 6 PIN | 6 | unknown | EAR99 | NXP | ||||||
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2N7002PS
Nexperia
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Check for Price | Yes | Not Recommended | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 6 | 60 V | 2 | 320 mA | 1.6 Ω | LOGIC LEVEL COMPATIBLE | 4 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 320 mW | SWITCHING | SILICON | R-PDSO-G6 | e3 | AEC-Q101; IEC-60134 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | NEXPERIA | SC-88, SOT-363, 6 PIN | compliant | EAR99 | Nexperia | ||||||
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2N7002PS,115
NXP Semiconductors
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Check for Price | Yes | Transferred | N-CHANNEL | YES | 320 mA | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 990 mW | e3 | 1 | 150 °C | -55 °C | 260 | 30 | TIN | NXP SEMICONDUCTORS | TSSOP | 6 | SOT363 | compliant | EAR99 |