Parametric results for: 2N7000RLRE under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

60 V 3

3 hits Apply

Drain Current-Max (ID) (1)

200 mA 3

3 hits Apply

Drain-source On Resistance-Max (1)

5 Ω 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

5 pF 3

3 hits Apply

TO-92 3

3 hits Apply

O-PBCY-T3 3

3 hits Apply

e0 1

3 hits Apply

Manufacturer (3)

Motorola Mobility LLC 1 Motorola Semiconductor Products 1 onsemi 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 2

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

ROUND 3

3 hits Apply

CYLINDRICAL 3

3 hits Apply

Obsolete 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

350 mW 2

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply