Parametric results for: BSS84 under Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 6 HIGH RELIABILITY 7 HIGH RELIABILITY, LOW THRESHOLD 3 LOGIC LEVEL COMPATIBLE 46 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED 9 LOGIC LEVEL COMPATIBLE, LOW THRESHOLD 1 LOW CAPACITANCE 1 LOW THRESHOLD 10

298 hits Apply

DRAIN 5

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Configuration (4)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 36 SINGLE 29 Single 6 SINGLE WITH BUILT-IN DIODE 149

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DS Breakdown Voltage-Min (2)

50 V 167 60 V 46

Min (V) - Max (V)

298 hits Apply

Drain Current-Max (Abs) (ID) (2)

100 mA 4 170 mA 4

Min (A) - Max (A)

298 hits Apply

Drain Current-Max (ID) (12)

100 mA 10 115 mA 15 130 mA 142 150 mA 16 160 mA 6 170 mA 20 180 mA 5 200 mA 1 210 mA 2 230 mA 11 260 mA 1 320 mA 1

Min (A) - Max (A)

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Drain-source On Resistance-Max (9)

3.5 Ω 4 3.75 Ω 2 6.4 Ω 5 7 Ω 7 7.5 Ω 7 8 Ω 19 8.5 Ω 26 10 Ω 134 12 Ω 1

Min (Ω) - Max (Ω)

298 hits Apply

METAL-OXIDE SEMICONDUCTOR 223

298 hits Apply

1.8 pF 1 3 pF 16 3.8 pF 5 5 pF 16 12 pF 89

Min (pF) - Max (pF)

298 hits Apply

TO-236 3 TO-236AB 44 TO-92 13

298 hits Apply

O-PBCY-T3 26 R-PBCC-N3 7 R-PDSO-F6 3 R-PDSO-G3 133 R-PDSO-G6 33

298 hits Apply

e0 26 e3 104

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Manufacturer (35)

Comchip Technology Corporation Ltd 2 Continental Device India Ltd 1 Diodes Incorporated 35 Fairchild Semiconductor Corporation 27 Formosa Microsemi Co Ltd 4 Freescale Semiconductor 4 Galaxy Microelectronics 15 Galaxy Semi-Conductor Co Ltd 3 Infineon Technologies AG 25 Infinex 1 Jiangsu Changjiang Electronics Technology Co Ltd 1 Lite-On Semiconductor Corporation 4 LRC Leshan Radio Co Ltd 18 Micro Commercial Components 17 Motorola Mobility LLC 4 Motorola Semiconductor Products 4 National Semiconductor Corporation 1 Nexperia 20 North American Philips Discrete Products Div 1 NXP Semiconductors 26 onsemi 8 PanJit Semiconductor 28 Philips Semiconductors 2 Rochester Electronics LLC 2 ROHM Semiconductor 7 Siemens 6 SPC Multicomp 1 Suzhou Good-Ark Electronics Co Ltd 2 Taitron Components Inc 1 Taiwan Semiconductor 2 Texas Instruments 8 Unisonic Technologies Co Ltd 6 WEITRON INTERNATIONAL CO., LTD. 3 Yangzhou Yangjie Electronics Co Ltd 3 Zetex / Diodes Inc 6

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1 99 NOT SPECIFIED 1

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Number of Elements (2)

1 180 2 36

Min - Max

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Number of Terminals (2)

3 166 6 36

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ENHANCEMENT MODE 218

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150.0 °C 163

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-65.0 °C 2 -55.0 °C 37

Min (°C) - Max (°C)

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PLASTIC/EPOXY 202

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RECTANGULAR 178 ROUND 24

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CHIP CARRIER 7 CYLINDRICAL 26 SMALL OUTLINE 169

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Active 127 Contact Manufacturer 7 Not Recommended 27 Obsolete 92 Transferred 45

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No 8 Yes 38

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235 1 245 1 260 82 NOT SPECIFIED 58

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Polarity/Channel Type (2)

N-CHANNEL AND P-CHANNEL 18 P-CHANNEL 205

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120 mW 1 200 mW 1 225 mW 2 250 mW 1 360 mW 1

Min (W) - Max (W)

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120 mW 1 200 mW 19 225 mW 22 250 mW 21 300 mW 19 310 mW 1 350 mW 1 360 mW 14 380 mW 2 500 mW 1 715 mW 1 990 mW 1 1.14 W 1 2.7 W 3

Min (W) - Max (W)

298 hits Apply

Surface Mount (2)

NO 26 YES 197

298 hits Apply