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31 - 40 of 65,633 results
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1SV229(TPH3,F)
Toshiba America Electronic Components
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$0.1934 | Yes | Active | 15 pF | SILICON | 15 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 6.67 % | 2 | ULTRA HIGH FREQUENCY | ABRUPT | R-PDSO-G2 | 125 °C | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | TOSHIBA CORP | 1-1E1A, 2 PIN | unknown | ||||||||||||||||||
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BB171X
NXP Semiconductors
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$0.2017 | Yes | Obsolete | 57 pF | 10 nA | SILICON | 32 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 32 V | 1 | 8.77 % | 20.6 | VERY HIGH FREQUENCY | 30 V | ABRUPT | R-PDSO-G2 | IEC-60134 | 1 | 125 °C | -55 °C | 260 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | NXP SEMICONDUCTORS | SC-76, SOD-323, 2 PIN | unknown | SOD | 2 | SOD323 | EAR99 | 8541.10.00 | NXP | |||||||
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BB145B,115
NXP Semiconductors
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$0.2054 | Yes | Obsolete | 6.8 pF | SILICON | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 8 V | 1 | 5.88 % | 2.2 | ABRUPT | Not Qualified | R-PDSO-F2 | e3 | IEC-60134 | 1 | 150 °C | -55 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | NXP SEMICONDUCTORS | ULTRA SMALL, PLASTIC, SMD, SC-79, 2 PIN | compliant | SOD | 2 | SOD523 | EAR99 | 8541.10.00 | NXP | |||||||
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BB814E6327GR1HTSA1
Infineon Technologies AG
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$0.2055 | Yes | Active | VARIABLE CAPACITANCE DIODE | e3 | 1 | NOT SPECIFIED | NOT SPECIFIED | Tin (Sn) | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | ||||||||||||||||||||||||||||||||
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1SV325(TPH3,F)
Toshiba America Electronic Components
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$0.2106 | Yes | Active | 46.75 pF | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 10 V | 1 | 4 | ABRUPT | SMALL OUTLINE | TOSHIBA CORP | unknown | EAR99 | 8541.10.00.80 | |||||||||||||||||||||||||||||
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BB170X
NXP Semiconductors
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$0.2109 | Yes | Obsolete | 1 | 260 | NXP SEMICONDUCTORS | unknown | SOD | 2 | SOD323 | NXP | ||||||||||||||||||||||||||||||||||
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BB844E6327HTSA1
Infineon Technologies AG
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$0.2186 | Yes | Active | 43.75 pF | SILICON | 18 V | VARIABLE CAPACITANCE DIODE | COMMON CATHODE, 2 ELEMENTS | YES | 2 | CAPACITANCE MATCHED TO 1.5% | 2.86 % | 3.2 | VERY HIGH FREQUENCY | ABRUPT | R-PDSO-G3 | e3 | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | ROHS COMPLIANT, SOT23, 3 PIN | compliant | EAR99 | 8541.10.00.80 | Infineon | ||||||||||
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BBY5303WE6327HTSA1
Infineon Technologies AG
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$0.2216 | Yes | Active | 5.3 pF | SILICON | 6 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 9.43 % | 1.8 | ULTRA HIGH FREQUENCY | HYPERABRUPT | R-PDSO-G2 | e3 | 1 | 125 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | R-PDSO-G2 | compliant | EAR99 | 8541.10.00.80 | Infineon | |||||||||||
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BBY5802VH6327XTSA1
Infineon Technologies AG
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$0.2234 | Yes | Active | 18.3 pF | SILICON | 10 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 4.89 % | 1.15 | HYPERABRUPT | R-PDSO-F2 | e3 | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | INFINEON TECHNOLOGIES AG | R-PDSO-F2 | compliant | EAR99 | 8541.10.00.80 | Infineon | ||||||||||||
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1SV285(TPH3,F)
Toshiba America Electronic Components
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$0.2258 | Yes | Active | 4.5 pF | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 10 V | 1 | 2 | ABRUPT | SMALL OUTLINE | TOSHIBA CORP | unknown | EAR99 | 8541.10.00.80 | Toshiba |