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21 - 30 of 584 results
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1N5819HW1-7-F
Diodes Incorporated
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$0.1866 | Yes | Active | 1 A | 15 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 40 V | 1 | 30 A | 1 | R-PDSO-F2 | e3 | 1 | 125 °C | -55 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | FLAT | DUAL | DIODES INC | not_compliant | EAR99 | 8541.10.00.80 | |||||||||||||||
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1N5819
Microchip Technology Inc
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$3.1250 | Yes | Active | 1 A | SILICON | RECTIFIER DIODE | SINGLE | NO | 40 V | 1 | SCHOTTKY | HIGH RELIABILITY | 1 | Not Qualified | O-PALF-W2 | DO-41 | 150 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8541.10.00.80 | PLASTIC PACKAGE-2 | Microchip | |||||||||||||
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JAN1N5819-1
Microchip Technology Inc
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$7.8494 | No | Active | 1 A | 490 mV | 50 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 45 V | 1 | SCHOTTKY | HIGH RELIABILITY | GENERAL PURPOSE | 25 A | 1 | 45 V | Qualified | O-LALF-W2 | e0 | MIL-PRF-19500; MIL-STD-750 | DO-41 | 125 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | HERMETIC SEALED PACKAGE-2 | ||||||||||
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1N5819-1
Microsemi Corporation
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$8.2362 | No | No | Transferred | 1 A | SILICON | RECTIFIER DIODE | SINGLE | NO | 45 V | 1 | SCHOTTKY | HIGH RELIABILITY | 1 | Not Qualified | O-LALF-W2 | e0 | DO-41 | 125 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | unknown | EAR99 | 8541.10.00.80 | HERMETIC SEALED, GLASS PACKAGE-2 | Microsemi Corporation | ||||||||||||
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1N5819G
Microchip Technology Inc
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$8.2558 | No | Active | 1 A | SILICON | RECTIFIER DIODE | SINGLE | NO | 40 V | 1 | SCHOTTKY | HIGH RELIABILITY | 1 | Not Qualified | O-LALF-W2 | DO-41 | 150 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | unknown | HERMETIC SEALED, GLASS PACKAGE-2 | Microchip | |||||||||||||||
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1N5819-1
Microchip Technology Inc
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$8.2558 | No | Active | 1 A | 490 mV | 50 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 45 V | 1 | SCHOTTKY | GENERAL PURPOSE | 25 A | 1 | 45 V | Not Qualified | O-LALF-W2 | e0 | MIL-STD-750 | DO-41 | 125 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | HERMETIC SEALED, GLASS PACKAGE-2 | |||||||||||
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1N5819/TR
Microchip Technology Inc
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$8.4429 | Active | 1 A | SILICON | RECTIFIER DIODE | SINGLE | NO | 40 V | 1 | SCHOTTKY | HIGH RELIABILITY | 1 | Not Qualified | O-PALF-W2 | DO-41 | 150 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.80 | Microchip | |||||||||||||||
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JANTX1N5819-1/TR
Microchip Technology Inc
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$8.4429 | No | Active | 1 A | 490 mV | 50 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 45 V | 1 | SCHOTTKY | HIGH RELIABILITY | GENERAL PURPOSE | 25 A | 1 | 45 V | O-LALF-W2 | e0 | MIL-PRF-19500; MIL-STD-750 | DO-41 | 125 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | unknown | ||||||||||||
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1N5819-1E3
Microchip Technology Inc
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$8.4429 | Yes | Active | 1 A | 490 mV | 50 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 45 V | 1 | SCHOTTKY | GENERAL PURPOSE | 25 A | 1 | 45 V | O-LALF-W2 | MIL-STD-750 | DO-41 | 125 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 | ||||||||||||||
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1N5819-1/TR
Microchip Technology Inc
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$8.4429 | No | Active | 1 A | 490 mV | 50 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 45 V | 1 | SCHOTTKY | GENERAL PURPOSE | 25 A | 1 | 45 V | O-LALF-W2 | e0 | MIL-STD-750 | DO-41 | 125 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | unknown |