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Power Field-Effect Transistor, 16.9A I(D), 100V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
57AJ0777
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Newark | Mosfet, N-Ch, 100V, 16.9A, To-252 Rohs Compliant: Yes |Vishay SUD20N10-66L-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 11996 |
|
$0.5640 / $0.8930 | Buy Now |
DISTI #
01X0090
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Newark | N-Channel 100-V (D-S) Mosfet Rohs Compliant: Yes |Vishay SUD20N10-66L-GE3 Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2870 / $0.3820 | Buy Now |
DISTI #
SUD20N10-66L-GE3
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Avnet Americas | Trans MOSFET N-CH 100V 16.9A 3-Pin TO-252 - Tape and Reel (Alt: SUD20N10-66L-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$0.2929 / $0.3722 | Buy Now |
DISTI #
78-SUD20N10-66L-GE3
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Mouser Electronics | MOSFET N-Channel 100-V D-S RoHS: Compliant | 5890 |
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$0.2730 / $0.8200 | Buy Now |
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Future Electronics | Trans MOSFET N-CH 100V 16.9A 3-Pin TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0Reel |
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$0.2950 / $0.3150 | Buy Now |
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Future Electronics | Trans MOSFET N-CH 100V 16.9A 3-Pin TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0Reel |
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$0.2950 / $0.3150 | Buy Now |
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Bristol Electronics | 840 |
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RFQ | ||
DISTI #
SUD20N10-66L-GE3
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TTI | MOSFET N-Channel 100-V D-S RoHS: Compliant pbFree: Pb-Free Min Qty: 2000 Package Multiple: 2000 Container: Reel |
Americas - 4000 In Stock |
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$0.2710 / $0.3100 | Buy Now |
DISTI #
SUD20N10-66L-GE3
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Avnet Americas | Trans MOSFET N-CH 100V 16.9A 3-Pin TO-252 - Tape and Reel (Alt: SUD20N10-66L-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$0.2929 / $0.3722 | Buy Now |
DISTI #
SUD20N10-66L-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 100V, 16.9A, Idm: 25A Min Qty: 2000 | 0 |
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$0.3590 | RFQ |
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SUD20N10-66L-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SUD20N10-66L-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 16.9A I(D), 100V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 11.25 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 16.9 A | |
Drain-source On Resistance-Max | 0.066 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 25 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SUD20N10-66L-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SUD20N10-66L-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SI7322DN-T1-GE3 | Power Field-Effect Transistor, 18A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK1212-8 | Vishay Intertechnologies | SUD20N10-66L-GE3 vs SI7322DN-T1-GE3 |