Datasheets
SI7322DN-T1-GE3 by:

Power Field-Effect Transistor, 18A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK1212-8

Part Details for SI7322DN-T1-GE3 by Vishay Intertechnologies

Overview of SI7322DN-T1-GE3 by Vishay Intertechnologies

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Price & Stock for SI7322DN-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 16P3838
Newark N Channel Mosfet, 100V, 18A, Powerpak, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:18A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:4.4V Rohs Compliant: Yes |Vishay SI7322DN-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 3,000 $0.7270
  • 6,000 $0.7160
  • 12,000 $0.6960
$0.6960 / $0.7270 Buy Now
DISTI # SI7322DN-T1-GE3
Avnet Americas Trans MOSFET N-CH 100V 5.5A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7322DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.8489
  • 6,000 $0.8217
  • 12,000 $0.7945
  • 18,000 $0.7623
  • 24,000 $0.7376
  • 30,000 $0.7029
  • 300,000 $0.6683
$0.6683 / $0.8489 Buy Now
DISTI # 781-SI7322DN-T1-GE3
Mouser Electronics MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant 11550
  • 1 $1.6400
  • 10 $1.3400
  • 100 $1.0300
  • 500 $0.8660
  • 1,000 $0.6950
  • 3,000 $0.6500
  • 6,000 $0.6270
  • 9,000 $0.6150
$0.6150 / $1.6400 Buy Now
Future Electronics Single N-Channel 100 V 0.058 Ohms Surface Mount Power Mosfet - PowerPAK-1212-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 3000
Reel
  • 3,000 $0.6200
  • 6,000 $0.5950
$0.5950 / $0.6200 Buy Now
Future Electronics Single N-Channel 100 V 0.058 Ohms Surface Mount Power Mosfet - PowerPAK-1212-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.6200
  • 6,000 $0.5950
$0.5950 / $0.6200 Buy Now
DISTI # SI7322DN-T1-GE3
TTI MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 42000
In Stock
  • 3,000 $0.6310
  • 6,000 $0.6190
$0.6190 / $0.6310 Buy Now
Chip 1 Exchange INSTOCK 33000
RFQ
DISTI # SI7322DN-T1-GE3
Avnet Asia Trans MOSFET N-CH 100V 5.5A 8-Pin PowerPAK 1212 T/R (Alt: SI7322DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days 0
RFQ
DISTI # SI7322DN-T1-GE3
EBV Elektronik Trans MOSFET N-CH 100V 5.5A 8-Pin PowerPAK 1212 T/R (Alt: SI7322DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SI7322DN-T1-GE3

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SI7322DN-T1-GE3 Part Data Attributes:

SI7322DN-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI7322DN-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 18A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK1212-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description POWERPAK1212-8
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 9 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 18 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.058 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 25 pF
JESD-30 Code S-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 3.8 W
Power Dissipation-Max (Abs) 52 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 35 ns
Turn-on Time-Max (ton) 30 ns

Alternate Parts for SI7322DN-T1-GE3

This table gives cross-reference parts and alternative options found for SI7322DN-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7322DN-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SUD20N10-66L-GE3 Power Field-Effect Transistor, 16.9A I(D), 100V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2 Vishay Intertechnologies SI7322DN-T1-GE3 vs SUD20N10-66L-GE3

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