Part Details for SI7322DN-T1-GE3 by Vishay Intertechnologies
Overview of SI7322DN-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SI7322DN-T1-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
16P3838
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Newark | N Channel Mosfet, 100V, 18A, Powerpak, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:18A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:4.4V Rohs Compliant: Yes |Vishay SI7322DN-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.6960 / $0.7270 | Buy Now |
DISTI #
SI7322DN-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 100V 5.5A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7322DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
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$0.6683 / $0.8489 | Buy Now |
DISTI #
781-SI7322DN-T1-GE3
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Mouser Electronics | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant | 11550 |
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$0.6150 / $1.6400 | Buy Now |
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Future Electronics | Single N-Channel 100 V 0.058 Ohms Surface Mount Power Mosfet - PowerPAK-1212-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 3000Reel |
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$0.5950 / $0.6200 | Buy Now |
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Future Electronics | Single N-Channel 100 V 0.058 Ohms Surface Mount Power Mosfet - PowerPAK-1212-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.5950 / $0.6200 | Buy Now |
DISTI #
SI7322DN-T1-GE3
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TTI | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 42000 In Stock |
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$0.6190 / $0.6310 | Buy Now |
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Chip 1 Exchange | INSTOCK | 33000 |
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RFQ | |
DISTI #
SI7322DN-T1-GE3
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Avnet Asia | Trans MOSFET N-CH 100V 5.5A 8-Pin PowerPAK 1212 T/R (Alt: SI7322DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days | 0 |
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RFQ | |
DISTI #
SI7322DN-T1-GE3
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EBV Elektronik | Trans MOSFET N-CH 100V 5.5A 8-Pin PowerPAK 1212 T/R (Alt: SI7322DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SI7322DN-T1-GE3
SI7322DN-T1-GE3 CAD Models
SI7322DN-T1-GE3 Part Data Attributes:
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SI7322DN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI7322DN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 18A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPAK1212-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | POWERPAK1212-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 9 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 18 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 18 A | |
Drain-source On Resistance-Max | 0.058 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 25 pF | |
JESD-30 Code | S-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 3.8 W | |
Power Dissipation-Max (Abs) | 52 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 35 ns | |
Turn-on Time-Max (ton) | 30 ns |
Alternate Parts for SI7322DN-T1-GE3
This table gives cross-reference parts and alternative options found for SI7322DN-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7322DN-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SUD20N10-66L-GE3 | Power Field-Effect Transistor, 16.9A I(D), 100V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2 | Vishay Intertechnologies | SI7322DN-T1-GE3 vs SUD20N10-66L-GE3 |