Datasheets
SBC817-40LT1G by:

Small Signal Bipolar Transistor,

Part Details for SBC817-40LT1G by Suzhou Good-Ark Electronics Co Ltd

Overview of SBC817-40LT1G by Suzhou Good-Ark Electronics Co Ltd

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for SBC817-40LT1G

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SBC817-40LT1G Part Data Attributes:

SBC817-40LT1G Suzhou Good-Ark Electronics Co Ltd
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SBC817-40LT1G Suzhou Good-Ark Electronics Co Ltd Small Signal Bipolar Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer GOOD-ARK ELECTRONICS CO LTD
Reach Compliance Code compliant
ECCN Code EAR99
Collector Current-Max (IC) 0.5 A
Collector-Base Capacitance-Max 1 pF
Collector-Emitter Voltage-Max 45 V
Configuration SINGLE
DC Current Gain-Min (hFE) 250
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.3 W
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100 MHz
VCEsat-Max 0.7 V

Alternate Parts for SBC817-40LT1G

This table gives cross-reference parts and alternative options found for SBC817-40LT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SBC817-40LT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BCX19 General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 45V; IC (A): 0.5A; HFE Min: 100; HFE Max: 600; VCE (V): 1V; IC (mA): 100mA; VCE(SAT) (V): 0.62V; IC (mA)1: 500mA; IB (mA): 50mA; FT Min (MHz): - MHz; PTM Max (W): 0.3W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23 Galaxy Microelectronics SBC817-40LT1G vs BCX19
BC817-25W Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Yangzhou Yangjie Electronics Co Ltd SBC817-40LT1G vs BC817-25W
BCH817-16LT1G Small Signal Bipolar Transistor onsemi SBC817-40LT1G vs BCH817-16LT1G
BC817-25F2HF Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Yangzhou Yangjie Electronics Co Ltd SBC817-40LT1G vs BC817-25F2HF
BC817K-16WH6327 Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3 Infineon Technologies AG SBC817-40LT1G vs BC817K-16WH6327
BC817-16 Transistor Taiwan Semiconductor SBC817-40LT1G vs BC817-16
BC817-25 Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SPC Multicomp SBC817-40LT1G vs BC817-25
BC817-25-B0RFG Small Signal Bipolar Transistor Taiwan Semiconductor SBC817-40LT1G vs BC817-25-B0RFG
BC817-40-B0RFG Small Signal Bipolar Transistor Taiwan Semiconductor SBC817-40LT1G vs BC817-40-B0RFG
BC817-25 Small Signal Bipolar Transistor, Surge Components Inc SBC817-40LT1G vs BC817-25

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