Datasheets
IXTP01N100D by:

Power Field-Effect Transistor, 0.1A I(D), 1000V, 110ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AD, TO-220AD, 3 PIN

Part Details for IXTP01N100D by IXYS Corporation

Overview of IXTP01N100D by IXYS Corporation

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Price & Stock for IXTP01N100D

Part # Distributor Description Stock Price Buy
DISTI # 747-IXTP01N100D
Mouser Electronics MOSFET 0.1 Amps 1000V 110 Rds RoHS: Compliant 127
  • 1 $6.8700
  • 10 $5.8800
  • 50 $5.3400
  • 100 $4.9000
  • 250 $4.6100
  • 500 $4.3300
  • 1,000 $3.8900
$3.8900 / $6.8700 Buy Now
Future Electronics Trans MOSFET N-CH Si 1KV 3-Pin(3+Tab) TO-220AD RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $3.4900
$3.4900 Buy Now
DISTI # IXTP01N100D
TTI MOSFET 0.1 Amps 1000V 110 Rds Min Qty: 300 Package Multiple: 50 Container: Tube Americas - 0
  • 300 $4.5600
  • 500 $4.2900
  • 1,000 $3.8500
  • 2,000 $3.6800
  • 2,500 $3.6100
$3.6100 / $4.5600 Buy Now
DISTI # IXTP01N100D
TME Transistor: N-MOSFET, unipolar, 1kV, 0.1A, 25W, TO220AB, 2ns Min Qty: 1 48
  • 1 $6.8600
  • 3 $6.1800
  • 10 $5.4600
  • 50 $4.9100
$4.9100 / $6.8600 Buy Now
ComSIT USA N-CHANNEL, DEPLETION MODE HIGH VOLTAGE MOSFET Power Field-Effect Transistor, 0.1A I(D), 1000V, 110ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AD RoHS: Compliant Europe - 8
RFQ
Chip1Cloud MOSFET N-CH 1KV .1A TO-220AB 10000
RFQ
New Advantage Corporation MOSFET DIS.100mA 1000V N-CH TO220AB DEPLETION MODE RoHS: Compliant Min Qty: 1 Package Multiple: 100 200
  • 100 $9.0100
  • 200 $8.4100
$8.4100 / $9.0100 Buy Now

Part Details for IXTP01N100D

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IXTP01N100D Part Data Attributes:

IXTP01N100D IXYS Corporation
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IXTP01N100D IXYS Corporation Power Field-Effect Transistor, 0.1A I(D), 1000V, 110ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AD, TO-220AD, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-220AD
Package Description TO-220AD, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 0.1 A
Drain-source On Resistance-Max 110 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AD
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode DEPLETION MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 0.4 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Pure Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTP01N100D

This table gives cross-reference parts and alternative options found for IXTP01N100D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTP01N100D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXTU01N100D Power Field-Effect Transistor, Littelfuse Inc IXTP01N100D vs IXTU01N100D
IXTY01N100D Power Field-Effect Transistor, Littelfuse Inc IXTP01N100D vs IXTY01N100D
IXTP01N100D Power Field-Effect Transistor, Littelfuse Inc IXTP01N100D vs IXTP01N100D
IXTU01N100D Power Field-Effect Transistor, 0.1A I(D), 1000V, 110ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251AA, 3 PIN IXYS Corporation IXTP01N100D vs IXTU01N100D

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