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Power Field-Effect Transistor, 3.6A I(D), 30V, 0.064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO-3
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
79R5632
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Newark | P Channel, Mosfet, -30V, -3.6 A, Sot-23, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:3.6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.3V Rohs Compliant: Yes |Infineon IRLML9301TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 36484 |
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$0.1090 | Buy Now |
DISTI #
IRLML9301TRPBFCT-ND
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DigiKey | MOSFET P-CH 30V 3.6A SOT23 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
91373 In Stock |
|
$0.0914 / $0.4200 | Buy Now |
DISTI #
IRLML9301TRPBF
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Avnet Americas | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R - Tape and Reel (Alt: IRLML9301TRPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 9000 |
|
$0.0666 / $0.0715 | Buy Now |
DISTI #
79R5632
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Avnet Americas | Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 79R5632) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 5 Days Container: Ammo Pack | 6494 Partner Stock |
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$0.2440 / $0.5050 | Buy Now |
DISTI #
942-IRLML9301TRPBF
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Mouser Electronics | MOSFET MOSFT P-Ch -30V -3.6A 64mOhm RoHS: Compliant | 177843 |
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$0.0910 / $0.4200 | Buy Now |
DISTI #
70019849
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RS | IRLML9301TRPBF P-channel MOSFET Transistor, 3.6 A, 30 V, 3-Pin SOT-23 | Infineon IRLML9301TRPBF RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk | 0 |
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$0.1610 / $0.2310 | RFQ |
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Future Electronics | Single N-Channel 30 V 64 mOhm 4.8 nC HEXFET® Power Mosfet - MICRO-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 819000Reel |
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$0.0867 / $0.0974 | Buy Now |
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Future Electronics | Single N-Channel 30 V 64 mOhm 4.8 nC HEXFET® Power Mosfet - MICRO-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 108000Reel |
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$0.0867 / $0.0974 | Buy Now |
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Future Electronics | Single N-Channel 30 V 64 mOhm 4.8 nC HEXFET® Power Mosfet - MICRO-3 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.0867 / $0.0974 | Buy Now |
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Future Electronics | Single N-Channel 30 V 64 mOhm 4.8 nC HEXFET® Power Mosfet - MICRO-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 3000 Container: Cut Tape/Mini-Reel | 0Cut Tape/Mini-Reel |
|
$0.0626 / $0.0939 | Buy Now |
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IRLML9301TRPBF
Infineon Technologies AG
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Datasheet
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Compare Parts:
IRLML9301TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 3.6A I(D), 30V, 0.064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SOT-23, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 16 Weeks, 5 Days | |
Samacsys Manufacturer | Infineon | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 3.6 A | |
Drain-source On Resistance-Max | 0.064 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 65 pF | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation Ambient-Max | 1.3 W | |
Power Dissipation-Max (Abs) | 1.3 W | |
Pulsed Drain Current-Max (IDM) | 15 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |