Datasheets
IRFBC40ASTRRPBF by:

Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3

Part Details for IRFBC40ASTRRPBF by Vishay Intertechnologies

Overview of IRFBC40ASTRRPBF by Vishay Intertechnologies

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for IRFBC40ASTRRPBF

Part # Distributor Description Stock Price Buy
DISTI # 84M3701
Newark Mosfet N-Channel 600V Rohs Compliant: Yes |Vishay IRFBC40ASTRRPBF Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 500 $2.5100
$2.5100 Buy Now
DISTI # IRFBC40ASTRRPBF
Avnet Americas Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFBC40ASTRRPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 18 Weeks, 0 Days Container: Reel 0
  • 800 $2.7423
  • 1,600 $2.6543
  • 3,200 $2.5664
  • 4,800 $2.4625
  • 6,400 $2.3825
  • 8,000 $2.2706
  • 80,000 $2.1587
$2.1587 / $2.7423 Buy Now
DISTI # 844-IRFBC40ASTRRPBF
Mouser Electronics MOSFET N-Chan 600V 6.2 Amp RoHS: Compliant 0
  • 800 $2.0800
$2.0800 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 0
  • 800 $2.1400
$2.1400 Buy Now
Bristol Electronics   800
RFQ
Quest Components   640
  • 1 $4.9440
  • 77 $3.0488
  • 329 $2.7192
$2.7192 / $4.9440 Buy Now
DISTI # IRFBC40ASTRRPBF
TTI MOSFET N-Chan 600V 6.2 Amp RoHS: Compliant pbFree: Pb-Free Min Qty: 800 Package Multiple: 800 Container: Reel Americas - 0
  • 800 $2.0600
$2.0600 Buy Now
DISTI # IRFBC40ASTRRPBF
Avnet Americas Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFBC40ASTRRPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 18 Weeks, 0 Days Container: Reel 0
  • 800 $2.7423
  • 1,600 $2.6543
  • 3,200 $2.5664
  • 4,800 $2.4625
  • 6,400 $2.3825
  • 8,000 $2.2706
  • 80,000 $2.1587
$2.1587 / $2.7423 Buy Now
Chip1Cloud MOSFET N-CH 600V 6.2A D2PAK 16469
RFQ
DISTI # IRFBC40ASTRRPBF
EBV Elektronik Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R (Alt: IRFBC40ASTRRPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 1 Weeks, 6 Days EBV - 0
Buy Now

Part Details for IRFBC40ASTRRPBF

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IRFBC40ASTRRPBF Part Data Attributes:

IRFBC40ASTRRPBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRFBC40ASTRRPBF Vishay Intertechnologies Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 18 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 570 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 6.2 A
Drain-source On Resistance-Max 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 25 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFBC40ASTRRPBF

This table gives cross-reference parts and alternative options found for IRFBC40ASTRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFBC40ASTRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFBC40AS Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Vishay Intertechnologies IRFBC40ASTRRPBF vs IRFBC40AS
IRFBC40ASPBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Vishay Intertechnologies IRFBC40ASTRRPBF vs IRFBC40ASPBF
SIHFBC40AS-GE3 Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Vishay Intertechnologies IRFBC40ASTRRPBF vs SIHFBC40AS-GE3
Part Number Description Manufacturer Compare
IRFBC40ASTRLPBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Vishay Intertechnologies IRFBC40ASTRRPBF vs IRFBC40ASTRLPBF
IRFBC40ASPBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Vishay Intertechnologies IRFBC40ASTRRPBF vs IRFBC40ASPBF
IRFBC40AS Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Vishay Intertechnologies IRFBC40ASTRRPBF vs IRFBC40AS
SIHFBC40AS-GE3 Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Vishay Intertechnologies IRFBC40ASTRRPBF vs SIHFBC40AS-GE3

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