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Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
63J6688
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Newark | N Channel Mosfet, 600V, 6.2A D2-Pak, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:6.2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRFBC40ASPBF Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$2.7700 | Buy Now |
DISTI #
IRFBC40ASPBF
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Avnet Americas | Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK - Bulk (Alt: IRFBC40ASPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Bulk | 0 |
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$2.1587 / $2.7423 | Buy Now |
DISTI #
844-IRFBC40ASPBF
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Mouser Electronics | MOSFET N-Chan 600V 6.2 Amp RoHS: Compliant | 1094 |
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$2.2900 / $4.1500 | Buy Now |
DISTI #
70078887
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RS | MOSFET, Power, N-Ch, VDSS 600V, RDS(ON) 1.2 Ohms, ID 6.2A, D2Pak, PD 125W, VGS +/-30V | Vishay PCS IRFBC40ASPBF RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Container: Bulk | 0 |
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$2.1700 / $2.5500 | RFQ |
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Future Electronics | Single N-Channel 600 V 1.2 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 732Tube |
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$1.9500 / $2.2300 | Buy Now |
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Future Electronics | Single N-Channel 600 V 1.2 Ohms Surface Mount Power Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$1.9500 / $2.2300 | Buy Now |
DISTI #
IRFBC40ASPBF
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TTI | MOSFET N-Chan 600V 6.2 Amp RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 1000 In Stock |
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$1.9500 / $2.2700 | Buy Now |
DISTI #
IRFBC40ASPBF
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TME | Transistor: N-MOSFET, unipolar, 600V, 3.9A, 125W, D2PAK,TO263 Min Qty: 1 | 86 |
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$1.0600 / $1.5900 | Buy Now |
DISTI #
IRFBC40ASPBF
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EBV Elektronik | Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK (Alt: IRFBC40ASPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 13 Weeks, 0 Days | EBV - 4650 |
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Buy Now | |
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LCSC | 600V 6.2A 1.23.7A10V 125W 4V250uA 1PCSNChannel D2PAK MOSFETs ROHS | 45 |
|
$1.3770 / $2.1527 | Buy Now |
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IRFBC40ASPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFBC40ASPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 570 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 6.2 A | |
Drain-source On Resistance-Max | 1.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 25 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFBC40ASPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFBC40ASPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFBC40ASTRRPBF | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRFBC40ASPBF vs IRFBC40ASTRRPBF |
IRFBC40ASTRLPBF | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Vishay Intertechnologies | IRFBC40ASPBF vs IRFBC40ASTRLPBF |
IRFBC40ASTRRPBF | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | IRFBC40ASPBF vs IRFBC40ASTRRPBF |
SIHFBC40AS-GE3 | TRANSISTOR 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power | Vishay Siliconix | IRFBC40ASPBF vs SIHFBC40AS-GE3 |
IRFBC40ASTRLPBF | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | IRFBC40ASPBF vs IRFBC40ASTRLPBF |
SIHFBC40ASTRL-GE3 | TRANSISTOR 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power | Vishay Siliconix | IRFBC40ASPBF vs SIHFBC40ASTRL-GE3 |
IRFBC40ASTRLPBF | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRFBC40ASPBF vs IRFBC40ASTRLPBF |
SIHFBC40AS-GE3 | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Vishay Intertechnologies | IRFBC40ASPBF vs SIHFBC40AS-GE3 |
IRFBC40AS | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 | Vishay Siliconix | IRFBC40ASPBF vs IRFBC40AS |
IRFBC40ASPBF | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRFBC40ASPBF vs IRFBC40ASPBF |