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Transistors / Power Field-Effect Transistors / IRFBC40ASTRLPBF
Datasheets
IRFBC40ASTRLPBF by:

Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3

Part Details for IRFBC40ASTRLPBF by Vishay Intertechnologies

Overview of IRFBC40ASTRLPBF by Vishay Intertechnologies

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for IRFBC40ASTRLPBF

Part # Distributor Description Stock Price Buy
DISTI # 41K2156
Newark N Channel Mosfet, 600V, 6.2A D2-Pak, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:6.2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:125W Rohs Compliant: Yes |Vishay IRFBC40ASTRLPBF Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $2.6400
  • 2,000 $2.5100
  • 4,000 $2.3400
  • 8,000 $2.1800
  • 12,000 $2.1000
  • 20,000 $2.0700
$2.0700 / $2.6400 Buy Now
DISTI # 84M3700
Newark Mosfet N-Channel 600V Rohs Compliant: Yes |Vishay IRFBC40ASTRLPBF Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 500 $2.5100
$2.5100 Buy Now
DISTI # IRFBC40ASTRLPBF
Avnet Americas Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFBC40ASTRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 800 $2.7423
  • 1,600 $2.6543
  • 3,200 $2.5664
  • 4,800 $2.4625
  • 6,400 $2.3825
  • 8,000 $2.2706
  • 80,000 $2.1587
$2.1587 / $2.7423 Buy Now
DISTI # 844-IRFBC40ASTRLPBF
Mouser Electronics MOSFET N-Chan 600V 6.2 Amp RoHS: Compliant 37
  • 1 $4.2700
  • 10 $3.5900
  • 25 $3.3900
  • 100 $2.9000
  • 250 $2.7400
  • 500 $2.5800
  • 800 $2.2900
$2.2900 / $4.2700 Buy Now
DISTI # V72:2272_09218961
Arrow Electronics Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 1912 Container: Cut Strips Americas - 793
  • 0 $1.0140
  • 1 $0.8302
  • 10 $0.8171
  • 25 $0.8041
  • 100 $0.7911
  • 250 $0.7781
  • 500 $0.7651
$0.7651 / $1.0140 Buy Now
Future Electronics Single N-Channel 600 V 1.2 Ohm Surface Mount Power Mosfet - TO-263 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 0
Reel
  • 800 $2.1500
  • 1,600 $2.1200
  • 2,400 $2.1000
  • 3,200 $2.0900
  • 4,000 $2.0500
$2.0500 / $2.1500 Buy Now
Future Electronics Single N-Channel 600 V 1.2 Ohm Surface Mount Power Mosfet - TO-263 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 0
Reel
  • 800 $2.1500
  • 1,600 $2.1200
  • 2,400 $2.1000
  • 3,200 $2.0900
  • 4,000 $2.0500
$2.0500 / $2.1500 Buy Now
DISTI # 32692582
Verical Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R Min Qty: 6 Package Multiple: 1 Date Code: 1912 Americas - 793
  • 6 $0.8302
  • 10 $0.8171
  • 25 $0.8041
  • 100 $0.7911
  • 250 $0.7781
  • 500 $0.7651
$0.7651 / $0.8302 Buy Now
DISTI # IRFBC40ASTRLPBF
TTI MOSFET N-Chan 600V 6.2 Amp RoHS: Compliant pbFree: Pb-Free Min Qty: 800 Package Multiple: 800 Container: Reel Americas - 0
  • 800 $2.2100
  • 1,600 $2.1200
$2.1200 / $2.2100 Buy Now
DISTI # IRFBC40ASTRLPBF
Avnet Americas Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFBC40ASTRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 800 $2.7423
  • 1,600 $2.6543
  • 3,200 $2.5664
  • 4,800 $2.4625
  • 6,400 $2.3825
  • 8,000 $2.2706
  • 80,000 $2.1587
$2.1587 / $2.7423 Buy Now
DISTI # IRFBC40ASTRLPBF
EBV Elektronik Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R (Alt: IRFBC40ASTRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 1 Weeks, 6 Days EBV - 0
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 800 800
  • 800 $1.0100
$1.0100 Buy Now

Part Details for IRFBC40ASTRLPBF

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IRFBC40ASTRLPBF Part Data Attributes:

Parametric Data
IRFBC40ASTRLPBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRFBC40ASTRLPBF Vishay Intertechnologies Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 570 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 6.2 A
Drain-source On Resistance-Max 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 25 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFBC40ASTRLPBF

This table gives cross-reference parts and alternative options found for IRFBC40ASTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFBC40ASTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFBC40AS Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Vishay Intertechnologies IRFBC40ASTRLPBF vs IRFBC40AS
IRFBC40ASPBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Vishay Intertechnologies IRFBC40ASTRLPBF vs IRFBC40ASPBF
IRFBC40ASTRRPBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Vishay Intertechnologies IRFBC40ASTRLPBF vs IRFBC40ASTRRPBF
SIHFBC40AS-GE3 Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Vishay Intertechnologies IRFBC40ASTRLPBF vs SIHFBC40AS-GE3
Part Number Description Manufacturer Compare
IRFBC40ASPBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Vishay Intertechnologies IRFBC40ASTRLPBF vs IRFBC40ASPBF
IRFBC40AS Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Vishay Intertechnologies IRFBC40ASTRLPBF vs IRFBC40AS
IRFBC40ASTRRPBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Vishay Intertechnologies IRFBC40ASTRLPBF vs IRFBC40ASTRRPBF
SIHFBC40AS-GE3 Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Vishay Intertechnologies IRFBC40ASTRLPBF vs SIHFBC40AS-GE3

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