Part Details for IRFBC40AS by Vishay Intertechnologies
Overview of IRFBC40AS by Vishay Intertechnologies
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFBC40AS
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFBC40AS
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Avnet Americas | TRANS MOSFET N-CH 600V 6.2A 3PIN D2PAK - Bulk (Alt: IRFBC40AS) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Container: Bulk | 0 |
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RFQ | |
DISTI #
IRFBC40AS
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Avnet Americas | TRANS MOSFET N-CH 600V 6.2A 3PIN D2PAK - Bulk (Alt: IRFBC40AS) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Container: Bulk | 0 |
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RFQ | |
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Chip1Cloud | Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) | MOSFET N-CH 600V 6.2A D2PAK | 7940 |
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RFQ |
Part Details for IRFBC40AS
IRFBC40AS CAD Models
IRFBC40AS Part Data Attributes:
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IRFBC40AS
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFBC40AS
Vishay Intertechnologies
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 570 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 6.2 A | |
Drain-source On Resistance-Max | 1.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 25 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFBC40AS
This table gives cross-reference parts and alternative options found for IRFBC40AS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFBC40AS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFBC40ASPBF | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Vishay Intertechnologies | IRFBC40AS vs IRFBC40ASPBF |
IRFBC40ASTRRPBF | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Vishay Intertechnologies | IRFBC40AS vs IRFBC40ASTRRPBF |
SIHFBC40AS-GE3 | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Vishay Intertechnologies | IRFBC40AS vs SIHFBC40AS-GE3 |