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Part Details for IRFB3206PBF by Infineon Technologies AG
Overview of IRFB3206PBF by Infineon Technologies AG
- Distributor Offerings: (29 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRFB3206PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
61M6826
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Newark | Mosfet Transistor, N Channel, 210 A, 60 V, 3 Mohm, 10 V, 4 V Rohs Compliant: Yes |Infineon IRFB3206PBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 2041 |
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$1.3000 / $1.9200 | Buy Now |
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DISTI #
448-IRFB3206PBF-ND
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DigiKey | MOSFET N-CH 60V 120A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube |
25687 In Stock |
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$0.9393 / $2.2400 | Buy Now |
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DISTI #
IRFB3206PBF
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Avnet Americas | Trans MOSFET N-CH 60V 210A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB3206PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 100 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
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$0.8454 / $1.0332 | Buy Now |
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DISTI #
942-IRFB3206PBF
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Mouser Electronics | MOSFET MOSFT 60V 210A 3mOhm 120nC Qg RoHS: Compliant | 21904 |
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$0.9390 / $1.5900 | Buy Now |
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DISTI #
E02:0323_00010978
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Arrow Electronics | Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2213 | Europe - 2512 |
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$0.8547 / $1.3371 | Buy Now |
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DISTI #
V36:1790_13889976
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Arrow Electronics | Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2223 | Americas - 340 |
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$0.9159 / $1.6050 | Buy Now |
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DISTI #
V99:2348_13889976
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Arrow Electronics | Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2226 | Americas - 17 |
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$0.8331 / $1.1508 | Buy Now |
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DISTI #
70017942
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RS | IRFB3206PBF N-channel MOSFET Transistor, 210 A, 60 V, 3-Pin TO-220AB | Infineon IRFB3206PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
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$1.4300 / $1.6800 | RFQ |
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Future Electronics | Single N-Channel 60V 3 mOhm 170 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Non Compliant pbFree: No Min Qty: 1 Package Multiple: 1 Container: Tube | 2537Tube |
|
$0.8150 / $1.0300 | Buy Now |
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Future Electronics | Single N-Channel 60V 3 mOhm 170 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Non Compliant pbFree: No Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
|
$0.8150 / $0.9650 | Buy Now |
Part Details for IRFB3206PBF
IRFB3206PBF CAD Models
IRFB3206PBF Part Data Attributes:
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IRFB3206PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFB3206PBF
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 170 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.003 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 250 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 840 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFB3206PBF
This table gives cross-reference parts and alternative options found for IRFB3206PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFB3206PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFB3206GPBF | Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 | Infineon Technologies AG | IRFB3206PBF vs IRFB3206GPBF |