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Part Details for IRFB3206GPBF by Infineon Technologies AG
Overview of IRFB3206GPBF by Infineon Technologies AG
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRFB3206GPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
IRFB3206GPBF-ND
|
DigiKey | MOSFET N-CH 60V 120A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube |
401 In Stock |
|
$1.3230 / $2.8300 | Buy Now |
|
DISTI #
IRFB3206GPBF
|
Avnet Americas | Trans MOSFET N-CH 60V 210A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB3206GPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 100 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
|
$1.1907 / $1.4553 | Buy Now |
|
DISTI #
942-IRFB3206GPBF
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Mouser Electronics | MOSFET MOSFT 60V 210A 3mOhm 120nC RoHS: Compliant | 963 |
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$1.3200 / $2.8300 | Buy Now |
|
DISTI #
70019671
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RS | IRFB3206GPBF N-channel MOSFET Transistor, 210 A, 60 V, 3-Pin TO-220 | Infineon IRFB3206GPBF RoHS: Not Compliant Min Qty: 450 Package Multiple: 1 Container: Bulk | 0 |
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$2.3600 / $2.9500 | RFQ |
|
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Future Electronics | Single N-Channel 60 V 3 mOhm 170 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$1.3500 / $1.4900 | Buy Now |
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Rochester Electronics | IRFB320 - 120A, 60V, N-Chanel Power MOSFET, TO-220AB RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 495 |
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$1.3100 / $1.5400 | Buy Now |
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DISTI #
IRFB3206GPBF
|
TME | Transistor: N-MOSFET, unipolar, 60V, 150A, 300W, TO220AB Min Qty: 1 | 0 |
|
$2.1400 / $2.9800 | RFQ |
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DISTI #
SP001565784
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EBV Elektronik | Trans MOSFET N-CH 60V 210A 3-Pin(3+Tab) TO-220AB (Alt: SP001565784) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
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Win Source Electronics | MOSFET N-CH 60V 120A TO220AB | 349890 |
|
$0.7770 / $1.1650 | Buy Now |
Part Details for IRFB3206GPBF
IRFB3206GPBF CAD Models
IRFB3206GPBF Part Data Attributes:
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IRFB3206GPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFB3206GPBF
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 170 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.003 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 840 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFB3206GPBF
This table gives cross-reference parts and alternative options found for IRFB3206GPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFB3206GPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFB3206PBF | Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | Infineon Technologies AG | IRFB3206GPBF vs IRFB3206PBF |
| IRFB3206PBF | Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRFB3206GPBF vs IRFB3206PBF |
| IRFB3206GPBF | Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 | International Rectifier | IRFB3206GPBF vs IRFB3206GPBF |