Datasheets
FDV303N by:

680mA, 25V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

Part Details for FDV303N by Rochester Electronics LLC

Overview of FDV303N by Rochester Electronics LLC

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Part Details for FDV303N

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FDV303N Part Data Attributes:

FDV303N Rochester Electronics LLC
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FDV303N Rochester Electronics LLC 680mA, 25V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 25 V
Drain Current-Max (ID) 0.68 A
Drain-source On Resistance-Max 0.45 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Qualification Status COMMERCIAL
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDV303N

This table gives cross-reference parts and alternative options found for FDV303N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDV303N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDV303N N-Channel Digital FET 25V, 0.68A, 0.45Ω, 3000-REEL onsemi FDV303N vs FDV303N
FDV303ND87Z Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation FDV303N vs FDV303ND87Z
FDV303NL99Z Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation FDV303N vs FDV303NL99Z
ME2324D Small Signal Field-Effect Transistor, 0.71A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-3 Force Mos Technology Co Ltd FDV303N vs ME2324D

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