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Part Details for BUK92150-55A,118 by Nexperia
Overview of BUK92150-55A,118 by Nexperia
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for BUK92150-55A,118
| Part # | Distributor | Description | Stock | Price | Buy | |
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Chip 1 Exchange | INSTOCK | 6354 |
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RFQ | |
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DISTI #
3439686
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element14 Asia-Pacific | RoHS: Compliant Min Qty: 1 Container: Cut Tape | 0 |
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$0.3563 / $0.8593 | Buy Now |
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DISTI #
3439686RL
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element14 Asia-Pacific | RoHS: Compliant Min Qty: 10 Container: Reel | 0 |
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$0.3563 / $0.6770 | Buy Now |
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DISTI #
3439686RL
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Farnell | MOSFET, AEC-Q101, N-CH, 55V, 11A, TO-252 RoHS: Compliant Min Qty: 10 Lead time: 27 Weeks, 1 Days Container: Reel | 0 |
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$0.2083 / $0.4668 | Buy Now |
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DISTI #
3439686
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Farnell | MOSFET, AEC-Q101, N-CH, 55V, 11A, TO-252 RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Cut Tape | 0 |
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$0.2083 / $0.6086 | Buy Now |
Part Details for BUK92150-55A,118
BUK92150-55A,118 CAD Models
BUK92150-55A,118 Part Data Attributes:
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BUK92150-55A,118
Nexperia
Buy Now
Datasheet
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Compare Parts:
BUK92150-55A,118
Nexperia
N-channel TrenchMOS logic level FET@en-us DPAK 3-Pin
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NEXPERIA | |
| Part Package Code | DPAK | |
| Package Description | PLASTIC, TO-252, SC-63, DPAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | SOT428 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Nexperia | |
| Avalanche Energy Rating (Eas) | 16 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.155 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BUK92150-55A,118
This table gives cross-reference parts and alternative options found for BUK92150-55A,118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUK92150-55A,118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQD13N06LTM | Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | BUK92150-55A,118 vs FQD13N06LTM |
| BUK92150-55A,118 | N-channel TrenchMOS logic level FET DPAK 3-Pin | NXP Semiconductors | BUK92150-55A,118 vs BUK92150-55A,118 |
| BUK92150-55A | 11A, 55V, 0.155ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3 | NXP Semiconductors | BUK92150-55A,118 vs BUK92150-55A |
| UTD3055G-TN3-R | Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE, DPAK-3 | Unisonic Technologies Co Ltd | BUK92150-55A,118 vs UTD3055G-TN3-R |
| FQD13N06TM | Power MOSFET, N-Channel, QFET®, 60 V, 10 A, 140 mΩ, DPAK, 2500-REEL | onsemi | BUK92150-55A,118 vs FQD13N06TM |
| BUK92150-55A | Power Field-Effect Transistor, 11A I(D), 55V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | Nexperia | BUK92150-55A,118 vs BUK92150-55A |
| FQD13N06LTM | Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, DPAK, 2500-REEL | onsemi | BUK92150-55A,118 vs FQD13N06LTM |
| FQD13N06_NL | Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 | Fairchild Semiconductor Corporation | BUK92150-55A,118 vs FQD13N06_NL |
| 934056250118 | 11A, 55V, 0.155ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3 | NXP Semiconductors | BUK92150-55A,118 vs 934056250118 |
| 934056250118 | Power Field-Effect Transistor, 11A I(D), 55V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | Nexperia | BUK92150-55A,118 vs 934056250118 |