Datasheets
FQU13N06LTU by:

Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, IPAK, 5040-TUBE

Part Details for FQU13N06LTU by onsemi

Overview of FQU13N06LTU by onsemi

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Price & Stock for FQU13N06LTU

Part # Distributor Description Stock Price Buy
DISTI # 31Y1567
Newark Mosfet, N Ch, 60V, 11A, To-251Aa-3, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:11A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.5V, Msl:- Rohs Compliant: Yes |Onsemi FQU13N06LTU Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
Rochester Electronics Power Field-Effect Transistor, 11A, 60V, 0.145ohm, N-Channel, MOSFET, TO-251 ' RoHS: Compliant Status: Obsolete Min Qty: 1 27963
  • 1 $0.4146
  • 25 $0.4063
  • 100 $0.3897
  • 500 $0.3731
  • 1,000 $0.3524
$0.3524 / $0.4146 Buy Now
DISTI # FQU13N06LTU
TME Transistor: N-MOSFET, unipolar, 60V, 7A, Idm: 44A, 28W, IPAK Min Qty: 1 0
  • 1 $1.2290
  • 5 $0.8430
  • 25 $0.6370
  • 70 $0.5060
  • 350 $0.4720
$0.4720 / $1.2290 RFQ
LCSC TO-251-3 MOSFETs ROHS 30
  • 1 $0.8483
  • 10 $0.7373
  • 30 $0.6677
  • 100 $0.5699
  • 500 $0.5377
  • 1,000 $0.5240
$0.5240 / $0.8483 Buy Now

Part Details for FQU13N06LTU

FQU13N06LTU CAD Models

FQU13N06LTU Part Data Attributes:

FQU13N06LTU onsemi
Buy Now Datasheet
Compare Parts:
FQU13N06LTU onsemi Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, IPAK, 5040-TUBE
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Package Description IPAK-3
Manufacturer Package Code 369AR
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 90 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.145 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 28 W
Pulsed Drain Current-Max (IDM) 44 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQU13N06LTU

This table gives cross-reference parts and alternative options found for FQU13N06LTU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQU13N06LTU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQU13N06LTU-WS Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, IPAK, TO-251 3L (IPAK), 5040-TUBE onsemi FQU13N06LTU vs FQU13N06LTU-WS
FQU13N06LTU_WS N-Channel QFET® MOSFET 60V, 11A, 115mΩ, TO-251 3L (IPAK), 30240-RAIL onsemi FQU13N06LTU vs FQU13N06LTU_WS
Part Number Description Manufacturer Compare
FQD13N06LTM Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQU13N06LTU vs FQD13N06LTM
FQU13N06LTU-WS Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, IPAK, TO-251 3L (IPAK), 5040-TUBE onsemi FQU13N06LTU vs FQU13N06LTU-WS
FQD13N06TF_NL Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 Fairchild Semiconductor Corporation FQU13N06LTU vs FQD13N06TF_NL
BUK92150-55A 11A, 55V, 0.155ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3 NXP Semiconductors FQU13N06LTU vs BUK92150-55A
FQD13N06_NL Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 Fairchild Semiconductor Corporation FQU13N06LTU vs FQD13N06_NL
FQD13N06 Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQU13N06LTU vs FQD13N06
FQD13N06TM Power MOSFET, N-Channel, QFET®, 60 V, 10 A, 140 mΩ, DPAK, 2500-REEL onsemi FQU13N06LTU vs FQD13N06TM
FQD13N06L Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQU13N06LTU vs FQD13N06L
FQU13N06LTU_WS N-Channel QFET® MOSFET 60V, 11A, 115mΩ, TO-251 3L (IPAK), 30240-RAIL onsemi FQU13N06LTU vs FQU13N06LTU_WS
FQD13N06TF Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQU13N06LTU vs FQD13N06TF

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