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Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, IPAK, 5040-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31Y1567
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Newark | Mosfet, N Ch, 60V, 11A, To-251Aa-3, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:11A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.5V, Msl:- Rohs Compliant: Yes |Onsemi FQU13N06LTU Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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Rochester Electronics | Power Field-Effect Transistor, 11A, 60V, 0.145ohm, N-Channel, MOSFET, TO-251 ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 27963 |
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$0.3524 / $0.4146 | Buy Now |
DISTI #
FQU13N06LTU
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TME | Transistor: N-MOSFET, unipolar, 60V, 7A, Idm: 44A, 28W, IPAK Min Qty: 1 | 0 |
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$0.4720 / $1.2290 | RFQ |
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LCSC | TO-251-3 MOSFETs ROHS | 30 |
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$0.5240 / $0.8483 | Buy Now |
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FQU13N06LTU
onsemi
Buy Now
Datasheet
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Compare Parts:
FQU13N06LTU
onsemi
Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, IPAK, 5040-TUBE
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Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Package Description | IPAK-3 | |
Manufacturer Package Code | 369AR | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 90 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.145 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-251 | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 28 W | |
Pulsed Drain Current-Max (IDM) | 44 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FQU13N06LTU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQU13N06LTU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FQU13N06LTU-WS | Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, IPAK, TO-251 3L (IPAK), 5040-TUBE | onsemi | FQU13N06LTU vs FQU13N06LTU-WS |
FQU13N06LTU_WS | N-Channel QFET® MOSFET 60V, 11A, 115mΩ, TO-251 3L (IPAK), 30240-RAIL | onsemi | FQU13N06LTU vs FQU13N06LTU_WS |