Part Details for W971GG6KB-25 by Winbond Electronics Corp
Overview of W971GG6KB-25 by Winbond Electronics Corp
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (9 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for W971GG6KB-25
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 20 |
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RFQ | ||
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Quest Components | DDR DRAM, 64MX16, 0.4NS, CMOS, PBGA84 | 16 |
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$4.2900 / $5.8500 | Buy Now |
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Quest Components | DDR DRAM, 64MX16, 0.4NS, CMOS, PBGA84 | 112 |
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$14.7000 / $18.9000 | Buy Now |
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Win Source Electronics | DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin WBGA / IC SDRAM 1GBIT 400MHZ 84BGA | 40530 |
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$3.0150 / $4.5220 | Buy Now |
Part Details for W971GG6KB-25
W971GG6KB-25 CAD Models
W971GG6KB-25 Part Data Attributes:
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W971GG6KB-25
Winbond Electronics Corp
Buy Now
Datasheet
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Compare Parts:
W971GG6KB-25
Winbond Electronics Corp
DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | WINBOND ELECTRONICS CORP | |
| Package Description | 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.32 | |
| Samacsys Manufacturer | Winbond | |
| Access Mode | MULTI BANK PAGE BURST | |
| Access Time-Max | 0.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 400 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 4,8 | |
| JESD-30 Code | R-PBGA-B84 | |
| Length | 12.5 mm | |
| Memory Density | 1073741824 bit | |
| Memory IC Type | DDR2 DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 84 | |
| Number of Words | 67108864 words | |
| Number of Words Code | 64000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | ||
| Organization | 64MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA84,9X15,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 4,8 | |
| Standby Current-Max | 0.008 A | |
| Supply Current-Max | 0.185 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Width | 8 mm |
Alternate Parts for W971GG6KB-25
This table gives cross-reference parts and alternative options found for W971GG6KB-25. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W971GG6KB-25, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT47H64M16NF-25EAAT:M | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | Micron Technology Inc | W971GG6KB-25 vs MT47H64M16NF-25EAAT:M |
| MT47H64M16NF-25EIT:MT | DDR DRAM, | Micron Technology Inc | W971GG6KB-25 vs MT47H64M16NF-25EIT:MT |
| IS43DR16640C-25DBLA1 | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84 | Integrated Silicon Solution Inc | W971GG6KB-25 vs IS43DR16640C-25DBLA1 |
| IS43DR16640C-25DBLA2 | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84 | Integrated Silicon Solution Inc | W971GG6KB-25 vs IS43DR16640C-25DBLA2 |
| MT47H64M16NF-25EXIT:M | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | Micron Technology Inc | W971GG6KB-25 vs MT47H64M16NF-25EXIT:M |
| MT47H64M16NF-25E:MTR | DDR DRAM, 64MX16, CMOS, PBGA84, FBGA-84 | Micron Technology Inc | W971GG6KB-25 vs MT47H64M16NF-25E:MTR |
| MT47H64M16NF-25E:M | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | Micron Technology Inc | W971GG6KB-25 vs MT47H64M16NF-25E:M |
| MT47H64M16NF-25EIT:M | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | Micron Technology Inc | W971GG6KB-25 vs MT47H64M16NF-25EIT:M |
| IS43DR16640C-25DBLI | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, TWBGA-84 | Integrated Silicon Solution Inc | W971GG6KB-25 vs IS43DR16640C-25DBLI |