Part Details for K4T1G164QE-HLF70 by Samsung Semiconductor
Overview of K4T1G164QE-HLF70 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for K4T1G164QE-HLF70
K4T1G164QE-HLF70 CAD Models
K4T1G164QE-HLF70 Part Data Attributes:
|
K4T1G164QE-HLF70
Samsung Semiconductor
Buy Now
Datasheet
|
Compare Parts:
K4T1G164QE-HLF70
Samsung Semiconductor
DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | BGA | |
Package Description | TFBGA, BGA84,9X15,32 | |
Pin Count | 84 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.32 | |
Access Mode | MULTI BANK PAGE BURST | |
Access Time-Max | 0.4 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 400 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 4,8 | |
JESD-30 Code | R-PBGA-B84 | |
Length | 12.5 mm | |
Memory Density | 1073741824 bit | |
Memory IC Type | DDR2 DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 84 | |
Number of Words | 67108864 words | |
Number of Words Code | 64000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | ||
Organization | 64MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TFBGA | |
Package Equivalence Code | BGA84,9X15,32 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 4,8 | |
Standby Current-Max | 0.005 A | |
Supply Current-Max | 0.2 mA | |
Supply Voltage-Max (Vsup) | 1.9 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | OTHER | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Width | 7.5 mm |
Alternate Parts for K4T1G164QE-HLF70
This table gives cross-reference parts and alternative options found for K4T1G164QE-HLF70. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4T1G164QE-HLF70, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
MT47H32M16CC-25LAT:B | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 12 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | Micron Technology Inc | K4T1G164QE-HLF70 vs MT47H32M16CC-25LAT:B |
HYI18T1G160BC-2.5F | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, PLASTIC, TFBGA-84 | Qimonda AG | K4T1G164QE-HLF70 vs HYI18T1G160BC-2.5F |
W971GG6IB-25 | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84 | Winbond Electronics Corp | K4T1G164QE-HLF70 vs W971GG6IB-25 |
HYB15T1G160C2F-2.5 | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, ROHS COMPLIANT, PLASTIC, TFBGA-84 | Qimonda AG | K4T1G164QE-HLF70 vs HYB15T1G160C2F-2.5 |
MT47H64M16B7-25IT:D | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 10 X 16.50 MM, ROHS COMPLIANT, FBGA-84 | Micron Technology Inc | K4T1G164QE-HLF70 vs MT47H64M16B7-25IT:D |
MT47H32M16GC-25ELAT:B | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 12 X 12.50 MM, FBGA-84 | Micron Technology Inc | K4T1G164QE-HLF70 vs MT47H32M16GC-25ELAT:B |
MT47H64M16NF-25EIT:M | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | Micron Technology Inc | K4T1G164QE-HLF70 vs MT47H64M16NF-25EIT:M |
MT47H64M16NF-25EXIT:M | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | Micron Technology Inc | K4T1G164QE-HLF70 vs MT47H64M16NF-25EXIT:M |
W971GG6JB-25 | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84 | Winbond Electronics Corp | K4T1G164QE-HLF70 vs W971GG6JB-25 |
NT5TU64M16HG-AC | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-84 | Nanya Technology Corporation | K4T1G164QE-HLF70 vs NT5TU64M16HG-AC |