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Transistors / Power Bipolar Transistors / MJD32CT4G
Datasheets
MJD32CT4G by:

3.0 A, 100 V PNP Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL

Part Details for MJD32CT4G by onsemi

Overview of MJD32CT4G by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for MJD32CT4G

Part # Distributor Description Stock Price Buy
DISTI # 45J1490
Newark Bipolar Transistor, Pnp, -100V, Transistor Polarity:Pnp, Collector Emitter Voltage Max:100V, Continuous Collector Current:3A, Power Dissipation:1.56W, Transistor Mounting:Surface Mount, No. Of Pins:4Pins, Transition Frequency:3Mhz Rohs Compliant: Yes |Onsemi MJD32CT4G Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 500 $0.3240
$0.3240 Buy Now
DISTI # 31Y2628
Newark Bipolar (Bjt) Single Transistor, General Purpose, Pnp, -100 V, 3 Mhz, 1.56 W, -3 A, 10 Rohs Compliant: Yes |Onsemi MJD32CT4G Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 2,500 $0.2720
  • 5,000 $0.2660
  • 10,000 $0.2570
  • 15,000 $0.2490
  • 25,000 $0.2470
$0.2470 / $0.2720 Buy Now
DISTI # MJD32CT4GOSCT-ND
DigiKey TRANS PNP 100V 3A DPAK Min Qty: 1 Lead time: 14 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 13150
In Stock
  • 1 $0.6000
  • 10 $0.5210
  • 100 $0.3609
  • 500 $0.3015
  • 1,000 $0.2566
  • 2,500 $0.2286
  • 5,000 $0.2165
  • 12,500 $0.2005
  • 25,000 $0.1985
$0.1985 / $0.6000 Buy Now
DISTI # MJD32CT4G
Avnet Americas Trans GP BJT PNP 100V 3A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: MJD32CT4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days Container: Reel 2500
  • 2,500 $0.2350
  • 5,000 $0.2287
  • 10,000 $0.2223
  • 15,000 $0.2160
  • 20,000 $0.2096
  • 25,000 $0.2033
  • 250,000 $0.1969
$0.1969 / $0.2350 Buy Now
DISTI # 863-MJD32CT4G
Mouser Electronics Bipolar Transistors - BJT 3A 100V 15W PNP RoHS: Compliant 2465
  • 1 $0.6000
  • 10 $0.4420
  • 100 $0.3550
  • 500 $0.2960
  • 1,000 $0.2570
  • 2,500 $0.2280
  • 5,000 $0.2160
  • 10,000 $0.2000
  • 25,000 $0.1980
$0.1980 / $0.6000 Buy Now
Future Electronics MJD Series 100 V 3 A PNP Complementary Power Transistor - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.2100
  • 5,000 $0.2050
  • 7,500 $0.2050
  • 10,000 $0.2000
  • 12,500 $0.1970
$0.1970 / $0.2100 Buy Now
Future Electronics MJD Series 100 V 3 A PNP Complementary Power Transistor - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.2100
  • 5,000 $0.2050
  • 7,500 $0.2050
  • 10,000 $0.2000
  • 12,500 $0.1970
$0.1970 / $0.2100 Buy Now
Bristol Electronics   2128
RFQ
Bristol Electronics   504
RFQ
DISTI # MJD32CT4G
Avnet Americas Trans GP BJT PNP 100V 3A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: MJD32CT4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days Container: Reel 2500
  • 2,500 $0.2350
  • 5,000 $0.2287
  • 10,000 $0.2223
  • 15,000 $0.2160
  • 20,000 $0.2096
  • 25,000 $0.2033
  • 250,000 $0.1969
$0.1969 / $0.2350 Buy Now
DISTI # MJD32CT4G
TME Transistor: PNP, bipolar, 100V, 3A, 15W, DPAK Min Qty: 1 0
  • 1 $0.9580
  • 5 $0.4340
  • 25 $0.3900
  • 100 $0.3450
  • 500 $0.3100
$0.3100 / $0.9580 RFQ
ComSIT USA COMPLEMENTARY POWER TRANSISTOR Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin RoHS: Compliant Europe - 59
RFQ
Velocity Electronics Our Stock 507
RFQ
Chip 1 Exchange INSTOCK 2900
RFQ
DISTI # MJD32CT4G
Avnet Asia Trans GP BJT PNP 100V 3A 3-Pin(2+Tab) DPAK T/R (Alt: MJD32CT4G) RoHS: Compliant Min Qty: 5000 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days 0
  • 5,000 $0.2089
  • 10,000 $0.2062
  • 15,000 $0.2036
  • 25,000 $0.2010
  • 50,000 $0.1961
  • 125,000 $0.1913
  • 250,000 $0.1868
$0.1868 / $0.2089 Buy Now
DISTI # MJD32CT4G
Avnet Silica Trans GP BJT PNP 100V 3A 3-Pin(2+Tab) DPAK T/R (Alt: MJD32CT4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days Silica - 0
Buy Now
DISTI # MJD32CT4G
EBV Elektronik Trans GP BJT PNP 100V 3A 3-Pin(2+Tab) DPAK T/R (Alt: MJD32CT4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now
LCSC 100V 1.56W 103A4V 3A PNP TO-252-2(DPAK) Bipolar Transistors - BJT ROHS 1254
  • 1 $0.5500
  • 10 $0.4388
  • 30 $0.3920
  • 100 $0.3321
  • 500 $0.3057
  • 1,000 $0.2911
$0.2911 / $0.5500 Buy Now

Part Details for MJD32CT4G

MJD32CT4G CAD Models

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MJD32CT4G Part Data Attributes:

Parametric Data
MJD32CT4G onsemi
Buy Now Datasheet
Compare Parts:
MJD32CT4G onsemi 3.0 A, 100 V PNP Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code DPAK (SINGLE GAUGE) TO-252
Package Description DPAK-3
Pin Count 3
Manufacturer Package Code 369C
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 37 Weeks
Samacsys Manufacturer onsemi
Case Connection COLLECTOR
Collector Current-Max (IC) 3 A
Collector-Emitter Voltage-Max 100 V
Configuration SINGLE
DC Current Gain-Min (hFE) 10
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 15 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 3 MHz

Alternate Parts for MJD32CT4G

This table gives cross-reference parts and alternative options found for MJD32CT4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD32CT4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MJD32CT4 3A, 100V, PNP, Si, POWER TRANSISTOR, PLASTIC, CASE 369C, DPAK-3 onsemi MJD32CT4G vs MJD32CT4
NJVMJD32T4G 3 A, 40 V PNP Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL, Automotive Qualified onsemi MJD32CT4G vs NJVMJD32T4G
MJD32C Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 Fairchild Semiconductor Corporation MJD32CT4G vs MJD32C
MJD32C-13 Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, GREEN, PLASTIC PACKAGE-3 Diodes Incorporated MJD32CT4G vs MJD32C-13
MJD32C 3A, 100V, PNP, Si, POWER TRANSISTOR, TO-252, DPAK-3 STMicroelectronics MJD32CT4G vs MJD32C
MJD32C 3A, 100V, PNP, Si, POWER TRANSISTOR, PLASTIC, CASE 369C, DPAK-3 onsemi MJD32CT4G vs MJD32C
MJD32C-TP Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC, DPACK-3 Micro Commercial Components MJD32CT4G vs MJD32C-TP
NJVMJD32CT4G 3.0 A, 100 V PNP Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL, Automotive Qualified onsemi MJD32CT4G vs NJVMJD32CT4G
CJD32C Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 Central Semiconductor Corp MJD32CT4G vs CJD32C
MJD32CRLG 3.0 A, 100 V PNP Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 1800-REEL onsemi MJD32CT4G vs MJD32CRLG
Part Number Description Manufacturer Compare
BSP19-TAPE-13 TRANSISTOR 1 A, 350 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power NXP Semiconductors MJD32CT4G vs BSP19-TAPE-13
MJD32CT4 Low voltage PNP power transistor STMicroelectronics MJD32CT4G vs MJD32CT4
BSP20TC Power Bipolar Transistor, 0.5A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin Diodes Incorporated MJD32CT4G vs BSP20TC
BSP19TC Power Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin Diodes Incorporated MJD32CT4G vs BSP19TC
BF723TRL Power Bipolar Transistor, 0.05A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin YAGEO Corporation MJD32CT4G vs BF723TRL
BF723TRL13 0.05A, 200V, PNP, Si, POWER TRANSISTOR, SOT-223, 4 PIN NXP Semiconductors MJD32CT4G vs BF723TRL13
BSP15TRL13 TRANSISTOR 1 A, 200 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power NXP Semiconductors MJD32CT4G vs BSP15TRL13
BSP20TRL13 Power Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin YAGEO Corporation MJD32CT4G vs BSP20TRL13
BSP19-T Power Bipolar Transistor Nexperia MJD32CT4G vs BSP19-T
BSP15-TAPE-13 TRANSISTOR 1 A, 200 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power NXP Semiconductors MJD32CT4G vs BSP15-TAPE-13

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