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Power Field-Effect Transistor, 21A I(D), 150V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
47W3314
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Newark | Mosfet, N Channel, 150V, 21A, 8Tdson, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:21A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon BSC520N15NS3GATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 26854 |
|
$0.5170 | Buy Now |
DISTI #
BSC520N15NS3GATMA1CT-ND
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DigiKey | MOSFET N-CH 150V 21A TDSON-8-5 Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
9251 In Stock |
|
$0.6418 / $1.5300 | Buy Now |
DISTI #
47W3314
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Avnet Americas | Power MOSFET, N Channel, 150 V, 21 A, 0.042 ohm, SuperSOT, Surface Mount - Bulk (Alt: 47W3314) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 1501409 Partner Stock |
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$0.7180 / $1.5900 | Buy Now |
DISTI #
BSC520N15NS3GATMA1
|
Avnet Americas | Trans MOSFET N-CH 150V 21A 8-Pin TDSON EP - Tape and Reel (Alt: BSC520N15NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
|
$0.5989 / $0.6845 | Buy Now |
DISTI #
E02:0323_00637815
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Arrow Electronics | Trans MOSFET N-CH 150V 21A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Date Code: 2335 | Europe - 30000 |
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$0.5565 / $0.5708 | Buy Now |
DISTI #
V72:2272_06384522
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Arrow Electronics | Trans MOSFET N-CH 150V 21A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2329 Container: Cut Strips | Americas - 6689 |
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$0.6181 / $1.4959 | Buy Now |
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Future Electronics | Single N-Channel 150 V 52 mOhm 8.7 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 5000Reel |
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$0.5450 / $0.5650 | Buy Now |
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Future Electronics | Single N-Channel 150 V 52 mOhm 8.7 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
|
$0.5450 / $0.5650 | Buy Now |
DISTI #
70320198
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Verical | Trans MOSFET N-CH 150V 21A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2335 | Americas - 30000 |
|
$0.5524 / $0.5685 | Buy Now |
DISTI #
69695619
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Verical | Trans MOSFET N-CH 150V 21A 8-Pin TDSON EP T/R Min Qty: 47 Package Multiple: 1 Date Code: 2329 | Americas - 13550 |
|
$0.5513 / $0.6713 | Buy Now |
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BSC520N15NS3GATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
BSC520N15NS3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 21A I(D), 150V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-F5 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 60 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 150 V | |
Drain Current-Max (ID) | 21 A | |
Drain-source On Resistance-Max | 0.052 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 57 W | |
Pulsed Drain Current-Max (IDM) | 84 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSC520N15NS3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC520N15NS3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPB530N15N3GATMA1 | Power Field-Effect Transistor, 21A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | BSC520N15NS3GATMA1 vs IPB530N15N3GATMA1 |
BSZ520N15NS3GXT | Power Field-Effect Transistor, 21A I(D), 150V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | Infineon Technologies AG | BSC520N15NS3GATMA1 vs BSZ520N15NS3GXT |
IPD530N15N3GATMA1 | Power Field-Effect Transistor, 21A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 | Infineon Technologies AG | BSC520N15NS3GATMA1 vs IPD530N15N3GATMA1 |