BSC520N15NS3GATMA1 vs IPD530N15N3GATMA1 feature comparison

BSC520N15NS3GATMA1 Infineon Technologies AG

Buy Now Datasheet

IPD530N15N3GATMA1 Infineon Technologies AG

Buy Now Datasheet
Pbfree Code No
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F5 SMALL OUTLINE, R-PSSO-G2
Pin Count 8
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 16 Weeks, 3 Days 17 Weeks, 5 Days
Samacsys Manufacturer Infineon Infineon
Avalanche Energy Rating (Eas) 60 mJ 60 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V 150 V
Drain Current-Max (ID) 21 A 21 A
Drain-source On Resistance-Max 0.052 Ω 0.053 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N8 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 8 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 57 W
Pulsed Drain Current-Max (IDM) 84 A 84 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn) Tin (Sn)
Terminal Form NO LEAD GULL WING
Terminal Position DUAL SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
JEDEC-95 Code TO-252

Compare BSC520N15NS3GATMA1 with alternatives

Compare IPD530N15N3GATMA1 with alternatives