SBC856BLT3G
vs
JC556BAMO
feature comparison
| Pbfree Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
ONSEMI
|
NXP SEMICONDUCTORS
|
| Part Package Code |
SOT-23 (TO-236) 3 LEAD
|
TO-92
|
| Package Description |
318-08, 3 PIN
|
CYLINDRICAL, O-PBCY-T3
|
| Pin Count |
3
|
3
|
| Manufacturer Package Code |
318-08
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
onsemi
|
|
| Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
| Collector-Emitter Voltage-Max |
65 V
|
65 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
220
|
220
|
| JEDEC-95 Code |
TO-236AB
|
TO-92
|
| JESD-30 Code |
R-PDSO-G3
|
O-PBCY-T3
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation-Max (Abs) |
0.3 W
|
|
| Reference Standard |
AEC-Q101
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
Matte Tin (Sn) - annealed
|
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
100 MHz
|
100 MHz
|
| Base Number Matches |
1
|
1
|
| Qualification Status |
|
Not Qualified
|
| Transistor Application |
|
SWITCHING
|
| VCEsat-Max |
|
0.65 V
|
|
|
|
Compare SBC856BLT3G with alternatives
Compare JC556BAMO with alternatives