IXTH30N45S
vs
IXFJ32N50Q
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
LITTELFUSE INC
|
IXYS CORP
|
| Package Description |
FLANGE MOUNT, R-PSFM-G2
|
IN-LINE, R-PSIP-T3
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
450 V
|
500 V
|
| Drain Current-Max (ID) |
30 A
|
32 A
|
| Drain-source On Resistance-Max |
0.16 Ω
|
0.15 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PSFM-G2
|
R-PSIP-T3
|
| JESD-609 Code |
e3
|
e3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
IN-LINE
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
120 A
|
128 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
Matte Tin (Sn)
|
MATTE TIN
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
10
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
Yes
|
| Part Package Code |
|
TO-268AA
|
| Pin Count |
|
4
|
| Additional Feature |
|
AVALANCHE RATED
|
| Avalanche Energy Rating (Eas) |
|
1500 mJ
|
| JEDEC-95 Code |
|
TO-268AA
|
| Power Dissipation-Max (Abs) |
|
360 W
|
|
|
|
Compare IXTH30N45S with alternatives
Compare IXFJ32N50Q with alternatives