IRFD112
vs
BSS131E6433
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
INFINEON TECHNOLOGIES AG
|
| Reach Compliance Code |
unknown
|
compliant
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
100 V
|
240 V
|
| Drain Current-Max (ID) |
0.8 A
|
0.11 A
|
| Drain-source On Resistance-Max |
0.8 Ω
|
14 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDIP-T3
|
R-PDSO-G3
|
| JESD-609 Code |
e0
|
e3
|
| Moisture Sensitivity Level |
NOT SPECIFIED
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
COMMERCIAL
|
Not Qualified
|
| Surface Mount |
NO
|
YES
|
| Terminal Finish |
TIN LEAD
|
MATTE TIN
|
| Terminal Form |
THROUGH-HOLE
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
5
|
2
|
| Package Description |
|
SMALL OUTLINE, R-PDSO-G3
|
| Pin Count |
|
3
|
| ECCN Code |
|
EAR99
|
| Additional Feature |
|
LOGIC LEVEL COMPATIBLE
|
| Feedback Cap-Max (Crss) |
|
4.2 pF
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Power Dissipation-Max (Abs) |
|
0.36 W
|
|
|
|
Compare IRFD112 with alternatives
Compare BSS131E6433 with alternatives