IRFD112 vs 2N7002K feature comparison

IRFD112 Rochester Electronics LLC

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2N7002K Rochester Electronics LLC

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Pbfree Code No Yes
Rohs Code No Yes
Part Life Cycle Code Active Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown unknown
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 60 V
Drain Current-Max (ID) 0.8 A 0.115 A
Drain-source On Resistance-Max 0.8 Ω 2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T3 R-PDSO-G3
JESD-609 Code e0 e3
Moisture Sensitivity Level NOT SPECIFIED 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status COMMERCIAL COMMERCIAL
Surface Mount NO YES
Terminal Finish TIN LEAD MATTE TIN
Terminal Form THROUGH-HOLE GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Part Package Code SOT-23
Package Description ROHS COMPLIANT, ULTRA SMALL PACKAGE-3
Pin Count 3
Feedback Cap-Max (Crss) 6 pF
JEDEC-95 Code TO-236AB

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