DF15005M vs DB1501S-C feature comparison

DF15005M Galaxy Microelectronics

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DB1501S-C Secos Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD SECOS CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Breakdown Voltage-Min 50 V 50 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
Non-rep Pk Forward Current-Max 50 A 50 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 1.5 A 1.5 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 50 V 50 V
Surface Mount NO YES
Base Number Matches 1 1
HTS Code 8541.10.00.80
Diode Element Material SILICON
JESD-30 Code R-PDSO-G4
Number of Terminals 4
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Terminal Form GULL WING
Terminal Position DUAL

Compare DF15005M with alternatives

Compare DB1501S-C with alternatives