DF15005M vs KBP151GC2 feature comparison

DF15005M Galaxy Semi-Conductor Co Ltd

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KBP151GC2 Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Breakdown Voltage-Min 50 V 50 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
Non-rep Pk Forward Current-Max 50 A 50 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 1.5 A 1.5 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 50 V 50 V
Surface Mount NO NO
Base Number Matches 4 1
HTS Code 8541.10.00.80
Diode Element Material SILICON
JESD-30 Code R-PSIP-W4
JESD-609 Code e3
Number of Terminals 4
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Reference Standard UL RECOGNIZED
Terminal Finish MATTE TIN
Terminal Form WIRE
Terminal Position SINGLE

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