CD214A-RS1M vs GS1MTR feature comparison

CD214A-RS1M Bourns Inc

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GS1MTR Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer BOURNS INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description R-PDSO-N2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Factory Lead Time 20 Weeks
Date Of Intro 2020-01-22 2019-04-04
Samacsys Manufacturer Bourns
Additional Feature LOW POWER LOSS LOW POWER LOSS
Application EFFICIENCY GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.3 V 1.1 V
JESD-30 Code R-PDSO-N2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Reverse Current-Max 5 µA 5 µA
Reverse Recovery Time-Max 0.5 µs 2.5 µs
Reverse Test Voltage 1000 V 1000 V
Surface Mount YES YES
Terminal Finish TIN
Terminal Form NO LEAD C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 1 2

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