BSS84PH6327
vs
VP0106N3
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
TELCOM SEMICONDUCTOR INC
|
| Package Description |
GREEN, PLASTIC PACKAGE-3
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Infineon
|
|
| Additional Feature |
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
60 V
|
|
| Drain Current-Max (ID) |
0.17 A
|
0.25 A
|
| Drain-source On Resistance-Max |
8 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
3 pF
|
|
| JESD-30 Code |
R-PDSO-G3
|
|
| JESD-609 Code |
e3
|
e0
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Power Dissipation-Max (Abs) |
0.36 W
|
1 W
|
| Reference Standard |
AEC-Q101
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
MATTE TIN
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
3
|
1
|
|
|
|
Compare BSS84PH6327 with alternatives
Compare VP0106N3 with alternatives