VP0106N3
vs
VP0106N3P004
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
TELCOM SEMICONDUCTOR INC
|
SUPERTEX INC
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| Drain Current-Max (ID) |
0.25 A
|
0.25 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
1
|
1
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Power Dissipation-Max (Abs) |
1 W
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
TIN LEAD
|
| Base Number Matches |
2
|
1
|
| HTS Code |
|
8541.29.00.95
|
| DS Breakdown Voltage-Min |
|
60 V
|
| Drain-source On Resistance-Max |
|
8 Ω
|
| Feedback Cap-Max (Crss) |
|
8 pF
|
| JEDEC-95 Code |
|
TO-92
|
| JESD-30 Code |
|
O-PBCY-T3
|
| Number of Terminals |
|
3
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
ROUND
|
| Package Style |
|
CYLINDRICAL
|
| Power Dissipation Ambient-Max |
|
1 W
|
| Qualification Status |
|
Not Qualified
|
| Terminal Form |
|
THROUGH-HOLE
|
| Terminal Position |
|
BOTTOM
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
|
|
|
Compare VP0106N3 with alternatives
Compare VP0106N3P004 with alternatives