BSC520N15NS3GXT vs BSC520N15NS3GATMA1 feature comparison

BSC520N15NS3GXT Infineon Technologies AG

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BSC520N15NS3GATMA1 Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F5 SMALL OUTLINE, R-PDSO-F5
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 18 Weeks 16 Weeks, 3 Days
Avalanche Energy Rating (Eas) 60 mJ 60 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V 150 V
Drain Current-Max (ID) 21 A 21 A
Drain-source On Resistance-Max 0.052 Ω 0.052 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N8 R-PDSO-N8
Number of Elements 1 1
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 57 W 57 W
Pulsed Drain Current-Max (IDM) 84 A 84 A
Surface Mount YES YES
Terminal Form NO LEAD NO LEAD
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code No
Pin Count 8
Samacsys Manufacturer Infineon
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Terminal Finish Tin (Sn)
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare BSC520N15NS3GXT with alternatives

Compare BSC520N15NS3GATMA1 with alternatives