BAS16HT3G
vs
BAS16HT1
feature comparison
| Pbfree Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
ONSEMI
|
MOTOROLA SEMICONDUCTOR PRODUCTS
|
| Manufacturer Package Code |
477-02
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.70
|
|
| Factory Lead Time |
47 Weeks
|
|
| Date Of Intro |
2016-04-07
|
|
| Samacsys Manufacturer |
onsemi
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JESD-30 Code |
R-PDSO-G2
|
|
| JESD-609 Code |
e3
|
e0
|
| Moisture Sensitivity Level |
1
|
|
| Non-rep Pk Forward Current-Max |
0.5 A
|
0.5 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Output Current-Max |
0.2 A
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Power Dissipation-Max |
0.2 W
|
|
| Rep Pk Reverse Voltage-Max |
100 V
|
75 V
|
| Reverse Recovery Time-Max |
0.006 µs
|
0.006 µs
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Matte Tin (Sn) - annealed
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Base Number Matches |
1
|
5
|
| Rohs Code |
|
No
|
| Forward Voltage-Max (VF) |
|
1.25 V
|
|
|
|
Compare BAS16HT3G with alternatives