2N7002DW vs 2N7002DW_R1_00001 feature comparison

2N7002DW Jiangsu Changjiang Electronics Technology Co Ltd

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2N7002DW_R1_00001 PanJit Semiconductor

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Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO LTD PAN JIT INTERNATIONAL INC
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Changjiang Electronics Tech (CJ)
Drain Current-Max (ID) 0.115 A 0.115 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 0.2 W
Surface Mount YES YES
Base Number Matches 14 1
Rohs Code Yes
Package Description GREEN, PLASTIC PACKAGE-6
Additional Feature ULTRA LOW RESISTANCE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain-source On Resistance-Max 5 Ω
Feedback Cap-Max (Crss) 5 pF
JESD-30 Code R-PDSO-G6
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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Compare 2N7002DW_R1_00001 with alternatives