2N7002DW vs 2N7002DWL6327 feature comparison

2N7002DW Jiangsu Changjiang Electronics Technology Co Ltd

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2N7002DWL6327 Infineon Technologies AG

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Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO LTD INFINEON TECHNOLOGIES AG
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Changjiang Electronics Tech (CJ)
Drain Current-Max (ID) 0.115 A 0.3 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating Temperature-Max 150 °C 150 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 0.2 W 0.5 W
Surface Mount YES YES
Base Number Matches 14 1
Rohs Code Yes
Package Description SMALL OUTLINE, R-PDSO-G6
Pin Count 6
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain-source On Resistance-Max 3 Ω
Feedback Cap-Max (Crss) 3 pF
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Compare 2N7002DW with alternatives

Compare 2N7002DWL6327 with alternatives