1N5819 vs JANS1N5819-1 feature comparison

1N5819 Sangdest Microelectronics (Nanjing) Co Ltd

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JANS1N5819-1 Microchip Technology Inc

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Rohs Code Yes No
Part Life Cycle Code Active Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant compliant
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS HIGH RELIABILITY
Application EFFICIENCY GENERAL PURPOSE
Breakdown Voltage-Min 40 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.9 V 0.49 V
JEDEC-95 Code DO-41 DO-41
JESD-30 Code O-PALF-W2 O-LALF-W2
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 25 A 25 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 125 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Qualification Status Not Qualified Qualified
Reference Standard MIL-STD-202 MIL-PRF-19500; MIL-STD-750
Rep Pk Reverse Voltage-Max 40 V 45 V
Reverse Current-Max 100 µA 50 µA
Reverse Test Voltage 40 V 45 V
Surface Mount NO NO
Technology SCHOTTKY SCHOTTKY
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 14 1
Package Description HERMETIC SEALED PACKAGE-2
Factory Lead Time 32 Weeks
JESD-609 Code e0
Terminal Finish TIN LEAD

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