JANS1N5819-1
vs
1N5819G
feature comparison
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
COMPENSATED DEVICES INC
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Package Description |
HERMETIC SEALED PACKAGE-2
|
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| Additional Feature |
METALLURGICALLY BONDED
|
FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JEDEC-95 Code |
DO-41
|
DO-41
|
| JESD-30 Code |
O-XALF-W2
|
O-PALF-W2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
UNSPECIFIED
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Qualification Status |
Not Qualified
|
|
| Reference Standard |
MIL-19500/586
|
|
| Surface Mount |
NO
|
NO
|
| Technology |
SCHOTTKY
|
SCHOTTKY
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
6
|
8
|
| Rohs Code |
|
Yes
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.80
|
| JESD-609 Code |
|
e3
|
| Number of Phases |
|
1
|
| Operating Temperature-Max |
|
125 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Rep Pk Reverse Voltage-Max |
|
40 V
|
| Terminal Finish |
|
TIN
|
| Time@Peak Reflow Temperature-Max (s) |
|
10
|
|
|
|
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