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onsemi
Igbt, 1.2Kv, 35A, 150Deg C, 298W, Continuous Collector Current:35A, Collector Emitter Saturation Voltage:2.45V, Power Dissipation:298W, Collector Emitter Voltage Max:1.2Kv, No. Of Pins:3Pins, Operating Temperature Max:150°C Rohs Compliant: Yes |Onsemi HGT1S10N120BNST
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HGT1S10N120BNST Part Details
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onsemi
Transistor, igbt, n-Chan,1.2Kv V(Br)Ces,17A I(C),to-263Ab Rohs Compliant: Yes |Onsemi HGT1S10N120BNS
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800
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onsemi
Igbt Single Transistor, 35 A, 2.45 V, 298 W, 1.2 Kv, To-263Ab, 3 Rohs Compliant: Yes |Onsemi HGT1S10N120BNST
RoHS:
Compliant
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800
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1
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0
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30000
$1.9100
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$2.0200
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$2.4300
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