Parametric results for: mjd122 to-252-2 under Power Bipolar Transistors
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MJD122T4
STMicroelectronics
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$0.4182 | Yes | Active | 100 V | 8 A | NPN | YES | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 2 | 1 | 100 | 20 W | 20 W | SWITCHING | SILICON | 4 V | TO-252 | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | STMICROELECTRONICS | TO-252 | ROHS COMPLIANT, DPAK-2/3 | 3 | not_compliant | EAR99 | 8541.29.00.95 | STMicroelectronics | |||||||||
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MJD122G
onsemi
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$0.4302 | Yes | Active | 100 V | 8 A | NPN | YES | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 2 | 1 | 100 | 4 MHz | 20 W | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | ONSEMI | DPAK (SINGLE GAUGE) TO-252 | LEAD FREE, PLASTIC, CASE 369C-01, DPAK-3 | 3 | not_compliant | EAR99 | 8541.29.00.95 | onsemi | 369C | ||||||||||
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MJD122T4G
onsemi
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$0.6026 | Yes | Active | 100 V | 8 A | NPN | YES | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 2 | 1 | 100 | 4 MHz | 20 W | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | ONSEMI | DPAK (SINGLE GAUGE) TO-252 | LEAD FREE, PLASTIC, CASE 369C-01, DPAK-3 | 3 | not_compliant | EAR99 | 8541.29.00.95 | onsemi | 369C | ||||||||||
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MJD122-1
STMicroelectronics
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$0.7584 | Yes | Active | 100 V | 5 A | NPN | NO | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 3 | 1 | 100 | 20 W | SWITCHING | SILICON | TO-251AA | R-PSIP-T3 | e3 | Not Qualified | 1 | 150 °C | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN | THROUGH-HOLE | SINGLE | STMICROELECTRONICS | TO-251AA | TO-251, IPAK-3 | 3 | not_compliant | EAR99 | STMicroelectronics | ||||||||||||||
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MJD122(TO-252)
Jiangsu Changjiang Electronics Technology Co Ltd
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Check for Price | Yes | Contact Manufacturer | 8 A | NPN | YES | SINGLE | 1 | 1000 | 1.5 W | 150 °C | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO LTD | , | unknown | EAR99 | |||||||||||||||||||||||||||||||||
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MJD122
Continental Device India Ltd
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Check for Price | Yes | Active | 100 V | 8 A | NPN | YES | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 2 | 1 | 100 | 4 MHz | BUILT IN BIAS RESISTANCE RATIO IS 0.015 | 200 pF | 20 W | AMPLIFIER | SILICON | 4 V | TO-252 | R-PSSO-G2 | IATF 16949 | 150 °C | -65 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | CONTINENTAL DEVICE INDIA LTD | compliant | EAR99 | |||||||||||||||||
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MJD122-1
Freescale Semiconductor
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Check for Price | No | Obsolete | 8 A | NPN | NO | DARLINGTON | 1000 | 20 W | 150 °C | MOTOROLA SEMICONDUCTOR PRODUCTS | , | unknown | |||||||||||||||||||||||||||||||||||
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MJD122
Galaxy Semi-Conductor Co Ltd
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Check for Price | Active | GALAXY SEMI-CONDUCTOR CO LTD | , | unknown | EAR99 | ||||||||||||||||||||||||||||||||||||||||||
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MJD122-1
onsemi
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Check for Price | No | Obsolete | 100 V | 8 A | NPN | NO | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 3 | 1 | 100 | 4 MHz | 20 W | AMPLIFIER | SILICON | R-PSIP-T3 | e0 | Not Qualified | 150 °C | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | ONSEMI | CASE 369-07, DPAK-3 | 3 | not_compliant | EAR99 | 8541.29.00.95 | CASE 369-07 | |||||||||||||||
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NJVMJD122T4G
onsemi
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Check for Price | Yes | Active | 100 V | 8 A | NPN | YES | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 2 | 1 | 100 | 4 MHz | 20 W | AMPLIFIER | SILICON | R-PSSO-G2 | e3 | AEC-Q101 | 1 | 150 °C | -65 °C | 260 | 30 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | ONSEMI | DPAK (SINGLE GAUGE) TO-252 | DPAK-3/2 | 3 | not_compliant | EAR99 | onsemi | 369C |