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IS46LR32160B-6BLA1
Integrated Silicon Solution Inc
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$15.7503 | Yes | Yes | Not Recommended | 536.8709 Mbit | 32 | 16MX32 | 1.8 V | 5.5 ns | 166 MHz | 8192 | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8,16 | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8,16 | 10 µA | 130 µA | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B90 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 90 | PLASTIC/EPOXY | TFBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | DSBGA | TFBGA, BGA90,9X15,32 | 90 | compliant | EAR99 | 8542.32.00.28 | Integrated Silicon Solution Inc. | ||
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IS46LR32160B-6BLA2
Integrated Silicon Solution Inc
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$18.5992 | Yes | Yes | Not Recommended | 536.8709 Mbit | 32 | 16MX32 | 1.8 V | 5.5 ns | 166 MHz | 8192 | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8,16 | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8,16 | 10 µA | 130 µA | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B90 | Not Qualified | e1 | 3 | 105 °C | -40 °C | 90 | PLASTIC/EPOXY | TFBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | DSBGA | TFBGA, BGA90,9X15,32 | 90 | compliant | EAR99 | 8542.32.00.28 | Integrated Silicon Solution Inc. | ||
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IS46LR32160B-6BLA2-TR
Integrated Silicon Solution Inc
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Check for Price | Yes | Not Recommended | 536.8709 Mbit | 32 | 16MX32 | 1.8 V | 5.5 ns | 166 MHz | 8192 | DDR1 DRAM | COMMON | 2,4,8,16 | 16000000 | 16.7772 M | 3-STATE | 2,4,8,16 | 10 µA | 130 µA | CMOS | INDUSTRIAL | R-PBGA-B90 | Not Qualified | 105 °C | -40 °C | 90 | PLASTIC/EPOXY | FBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 800 µm | BOTTOM | INTEGRATED SILICON SOLUTION INC | FBGA, BGA90,9X15,32 | compliant | EAR99 | 8542.32.00.28 | Integrated Silicon Solution Inc. | |||||||||||||||||||
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IS46LR32160B-75BLA2
Integrated Silicon Solution Inc
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Check for Price | Yes | Yes | Obsolete | 536.8709 Mbit | 32 | 16MX32 | 1.8 V | 6 ns | 133 MHz | 8192 | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8,16 | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8,16 | 10 µA | 110 µA | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B90 | Not Qualified | e1 | 3 | 105 °C | -40 °C | 90 | PLASTIC/EPOXY | TFBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | DSBGA | TFBGA, BGA90,9X15,32 | 90 | compliant | EAR99 | 8542.32.00.28 | |||
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IS46LR32160B-6BLA1
ABLIC Inc.
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Check for Price | Active | 536.8709 Mbit | 32 | 16MX32 | 1.8 V | 5.5 ns | FOUR BANK PAGE BURST | DDR DRAM | AUTO/SELF REFRESH | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B90 | Not Qualified | 85 °C | -40 °C | 90 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | SEIKO INSTRUMENTS USA INC | DSBGA | TFBGA, | 90 | unknown | ||||||||||||||||||||
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IS46LR32160B-6BLA2
ABLIC Inc.
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Check for Price | Active | 536.8709 Mbit | 32 | 16MX32 | 1.8 V | 5.5 ns | FOUR BANK PAGE BURST | DDR DRAM | AUTO/SELF REFRESH | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B90 | Not Qualified | 105 °C | -40 °C | 90 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | SEIKO INSTRUMENTS USA INC | DSBGA | TFBGA, | 90 | unknown | ||||||||||||||||||||
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IS46LR32160B-75BLA2
ABLIC Inc.
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Check for Price | Active | 536.8709 Mbit | 32 | 16MX32 | 1.8 V | 6 ns | FOUR BANK PAGE BURST | DDR DRAM | AUTO/SELF REFRESH | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B90 | Not Qualified | 105 °C | -40 °C | 90 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | SEIKO INSTRUMENTS USA INC | DSBGA | TFBGA, | 90 | unknown | ||||||||||||||||||||
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IS46LR32160B-75BLA1
Integrated Silicon Solution Inc
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Check for Price | Yes | Yes | Obsolete | 536.8709 Mbit | 32 | 16MX32 | 1.8 V | 6 ns | 133 MHz | 8192 | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8,16 | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8,16 | 10 µA | 110 µA | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B90 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 90 | PLASTIC/EPOXY | TFBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | DSBGA | TFBGA, BGA90,9X15,32 | 90 | compliant | EAR99 | 8542.32.00.28 | |||
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IS46LR32160B-75BLA1-TR
Integrated Silicon Solution Inc
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Check for Price | Yes | Obsolete | 536.8709 Mbit | 32 | 16MX32 | 1.8 V | 6 ns | 133 MHz | 8192 | DDR1 DRAM | COMMON | 2,4,8,16 | 16000000 | 16.7772 M | 3-STATE | 2,4,8,16 | 10 µA | 110 µA | CMOS | INDUSTRIAL | R-PBGA-B90 | Not Qualified | 85 °C | -40 °C | 90 | PLASTIC/EPOXY | FBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 800 µm | BOTTOM | INTEGRATED SILICON SOLUTION INC | compliant | EAR99 | 8542.32.00.28 | |||||||||||||||||||||
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IS46LR32160B-75BLA2-TR
Integrated Silicon Solution Inc
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Check for Price | Yes | Obsolete | 536.8709 Mbit | 32 | 16MX32 | 1.8 V | 6 ns | 133 MHz | 8192 | DDR1 DRAM | COMMON | 2,4,8,16 | 16000000 | 16.7772 M | 3-STATE | 2,4,8,16 | 10 µA | 110 µA | CMOS | INDUSTRIAL | R-PBGA-B90 | Not Qualified | 105 °C | -40 °C | 90 | PLASTIC/EPOXY | FBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 800 µm | BOTTOM | INTEGRATED SILICON SOLUTION INC | compliant | EAR99 | 8542.32.00.28 |